UPA802T

PRELIMINARY DATA SHEET SILICON TRANSISTOR µPA802T HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) MINI MOLD The µPA802T has built-in 2 low-voltage transistors which are designed to amplify low noise in the VHF band to the UHF band. PACKAGE DRAWINGS (Unit: mm) 2.1±0.1 1.25±0.1 FEATURES Low Noise 0.65 0.65 1.3 High Gain |S21e|2 = 12 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA A Mini Mold Package Adopted Built-in 2 Transistors (2 × 2SC4227) 2.0±0.2 2 3 0.7 PART NUMBER QUANTITY Loose products (50 PCS) PACKING STYLE Embossed tape 8 mm wide. Pin 6 (Q1 Base), Pin 5 (Q2 Base), Pin 4 (Q2 Emitter) face to perforation side of the tape. µPA802T PIN CONFIGURATION (Top View) µPA802T-T1 Taping products (3 KPCS/Reel) 6 Q1 5 0~0.1 4 Remark If you require an evaluation sample, please contact an NEC Sales Representative. (Unit sample quantity is 50 pcs.) 1 2 Q2 3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) PARAMETER Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation SYMBOL VCBO VCEO VEBO IC PT RATING 20 10 1.5 65 150 in 1 element 200 in 2 elements Note 150 –65 to +150 UNIT V V V mA mW PIN CONNECTIONS 4. Emitter (Q2) 1. Collector (Q1) 5. Base (Q2) 2. Emitter (Q1) 6. Base (Q1) 3. Collector (Q2) Junction Temperature Storage Temperature Tj Tstg ˚C ˚C Note 110 mW must not be exceeded in 1 element. The information in this document is subject to change wi...