UPA803T

PRELIMINARY DATA SHEET SILICON TRANSISTOR µPA803T NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) MINI MOLD µPA803T has built-in 2 transistors which were developed for UHF. PACKAGE DRAWINGS (Unit: mm) FEATURES High fT fT = 5.5 GHz TYP. (@VCE = 5 V, IC = 5 mA, f = 1 GHz) 0.65 0.65 2.1±0.1 1.25±0.1 1.3 Cob = 0.7 pF TYP. (@VCB = 5 V, IE = 0, f = 1 MHz) A Surface Mounting Package Adopted Built-in 2 Transistors (2 × 2SC4570) 2.0±0.2 2 3 0.9±0.1 ORDERING INFORMATION PART NUMBER QUANTITY Loose products (50 PCS) PACKING STYLE Embossed tape 8 mm wide. Pin 6 (Q1 Base), Pin 5 (Q2 Base), Pin 4 (Q2 Emitter) face to perforation side of the tape. 0.7 4 5 µPA803T PIN CONFIGURATION (Top View) µPA803T-T1 Taping products (3 KPCS/Reel) 6 Q1 5 4 Remark If you require an evaluation sample, please contact an NEC Sales Representative. (Unit sample quantity is 50 pcs.) 0~0.1 Q2 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) PARAMETER Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation SYMBOL VCBO VCEO VEBO IC PT RATING 20 12 3 30 120 in 1 element 160 in 2 elements Note 125 –55 to +125 UNIT V V V mA mW 1 2 3 PIN CONNECTIONS 4. Emitter (Q2) 1. Collector (Q1) 5. Base (Q2) 2. Emitter (Q1) 6. Base (Q1) 3. Collector (Q2) Junction Temperature Storage Temperature Tj Tstg ˚C ˚C Note 90 mW must not be exceeded in 1 element. The information in this document is subject to change without notice. Document...