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UPA808T
NPN Transistor
Description
DATA SHEET SILICON
TRANSISTOR
µPA808T MICROWAVE LOW NOISE AMPLIFIER
NPN
SILICON EPITAXIAL
TRANSISTOR
(WITH BUILT-IN 2 ELEMENTS) SUPER MINI MOLD FEATURES Low Noise NF = 1.3 dB TYP. @VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz A Super Mini Mold Package Adopted Built-in 2
Transistor
s (2 × 2SC5184) 2.0±0.2 PACKAGE...
NEC
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