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UPA809T
NPN Transistor
Description
PRELIMINARY DATA SHEET SILICON
TRANSISTOR
µPA809T MICROWAVE LOW NOISE AMPLIFIER
NPN
SILICON EPITAXIAL
TRANSISTOR
(WITH BUILT-IN 2 ELEMENTS) MINI MOLD FEATURES Low Voltage Operation, Low Phase Distortion Low Noise NF = 1.5 dB TYP. @VCE = 3 V, IC = 7 mA, f = 2 GHz NF = 1.7 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz Large Absolute Maximum Collector Curr...
NEC
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