UPA821TC

DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA821TC NPN SILICON EPITAXIAL TWIN TRANSISTOR (WITH BUILT-IN 2 × 2SC5006) FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD DESCRIPTION The µPA821TC has built-in low-voltage two transistors which are designed for low-noise amplification in the VHF to UHF band. FEATURES Low noise: NF= 1.2 dB TYP.@ f = 1 GHz, VCE = 3 V, IC = 7 mA High gain: IS21el2 = 9.0 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA Flat-lead 6-pin thin-type ultra super minimold package Built-in 2 transistors (2 × 2SC5006) ORDERING INFORMATION Part Number Package Flat-lead 6-pin thin-type ultra super minimold Quantity Loose products (50 pcs) Taping products (3 kp/reel) Supplying Form Embossed tape 8 mm wide. Pin 6 (Q1 Base), Pin 5 (Q2 Emitter), Pin 4 (Q2 Base) face to perforation side of the tape. µPA821TC µPA821TC-T1 Remark To order evaluation samples, please contact your local NEC sales office. (Part number for sample order: µPA821TC. Unit sample quantity is 50 pcs). ABSOLUTE MAXIMUM RATINGS (TA = +25°C) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Symbol VCBO VCEO VEBO IC PT Note Ratings 20 12 3 100 200 in 1 element 230 in 2 elements 150 −65 to 150 Unit V V V mA mW Junction Temperature Storage Temperature Tj Tstg °C °C 2 Note Mounted on 1.08 cm × 1.0 mm glass epoxy substrate. Caution Electro-static sensitive devices. The information in this document is subject to ...