UPA827TF

PRELIMINARY DATA SHEET SILICON TRANSISTOR PPA827TF HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TWIN TRANSISTOR (WITH BUILT-IN 6-PIN 2 u 2SC5179) THIN-TYPE SMALL MINI MOLD FEATURES High gain with low operating current |S21e|2 = 9 dB TYP. @ VCE = 2 V, IC = 7 mA, f = 2 GHz |S21e| = 8.5 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz 6-pin thin-type small mini mold package Built-in 2 transistors (2 u 2SC5179) 2 PACKAGE DRAWINGS (Unit: mm) 2.10±0.1 1.25±0.1 1.30 ORDERING INFORMATION Part Number Quantity Loose products (50 pcs) Taping products (3 kpcs/reel) Packing Style Embossed tape 8 mm wide. Pin 6 (Q1 Base), Pin 5 (Q2 Emitter), Pin 4 (Q2 Base) face to perforation side of the tape. 2.00±0.2 0.65 2 0.65 3 PPA827TF PPA827TF-T1 0.60±0.1 4 5 Remark If you require an evaluation sample, please contact an NEC Sales Representative.(Unit sample quantity is 50 pcs). PIN CONFIGURATION (Top View) ABSOLUTE MAXIMUM RATINGS (TA = 25qC) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Symbol VCBO VCEO VEBO IC PT Rating 5 3 2 10 30 in 1 element 60 in 2 element 150 ð65 to 150 Unit V V V mA mW B1 6 Q1 1 C1 E2 5 B2 4 Q2 2 E1 C2 Junction Temperature Storage Temperature Tj Tstg °C °C PIN CONNECTIONS 1. Collector (Q1) 2. Emitter (Q1) 3. Collector (Q2) 4. Base (Q2) 5. Emitter (Q2) 6. Base (Q1) Caution is required concerning excess input, such as from static electricity, due to the ...