UPA835TC

DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA835TC NPN SILICON EPITAXIAL TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD PACKAGE DESCRIPTION The µPA835TC has built-in two different transistors (Q1 and Q2) for low noise amplification in the VHF band to UHF band. FEATURES Low noise Q1 : NF = 1.5 dB TYP. @ f = 2 GHz, VCE = 3 V, IC = 3 mA Q2 : NF = 1.2 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA High gain Q1 : |S21e|2 = 8.5 dB TYP. @ f = 2 GHz, VCE = 3 V, IC = 10 mA Q2 : |S21e|2 = 9.0 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA Flat-lead 6-pin thin-type ultra super minimold package Built-in 2 different transistors (2SC5010, 2SC5006) BUILT-IN TRANSISTORS Q1 3-pin ultra super minimold part No. 2SC5010 Q2 2SC5006 ORDERING INFORMATION Part Number Package Flat-lead 6-pin thin-type ultra super minimold Quantity Loose products (50 pcs) Taping products (3 kp/reel) Supplying Form 8 mm wide embossed tape. Pin 6 (Q1 Base), pin 5 (Q2 Emitter), pin 4 (Q2 Base) face to perforation side of the tape. µPA835TC µPA835TC-T1 Remark To order evaluation samples, please contact your local NEC sales office. (Part number for sample order: µPA835TC.) Caution Electro-static sensitive devices The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and a...