UPC1652G

DATA SHEET SHEET DATA BIPOLAR ANALOG INTEGRATED CIRCUIT µPC1652G SILICON MONOLITHIC BIPOLAR INTEGRATED CIRCUIT WIDE BAND AMPLIFIER DESCRIPTION The µPC1652G is a silicon monolithic integrated circuit especially designed as a wide band amplifier convering HF band through UHF band. INPUT GND GND GND PIN CONNECTIONS 1 2 3 4 8 7 6 5 GND VCC VCC OUTPUT FEATURES Excellent frequency response : 1 200 MHz TYP. @ 3 dB down High power gain : 18 dB TYP. @ f = 500 MHz Low voltage operation : VCC = 5 V SOP package ABSOLUTE MAXIMUM RATINGS (TA = +25 °C) Supply Voltage Total Power dissipation Operating Ambient Temperature Storage Temperature VCC PD TA Tstg 7 440 −20 to +75 −40 to +125 V mW °C °C EQUIVALENT CIRCUIT VCC ELECTRICAL CHARACTERISTICS (TA = +25 °C, VCC = 5 V) CHARACTERISTIC Circuit Current Power Gain Noise Figure OUT SYMBOL MIN. TYP. MAX. UNIT ICC GP NF BW ISO S11 S22 PO 15 16 20 18 5.5 1000 1200 23 17 12 3 26 20 15 5 25 20 6.5 mA dB dB TEST CONDITIONS No signals f = 500 MHz f = 500 MHz Band Width Isolation MHz 3 dB down below flat gain dB dB dB f = 500 MHz f = 500 MHz f = 500 MHz IN Input Return Loss Output Return Loss Maximum Output Level GND dBm f = 500 MHz NEC cannot assume any responsibility for any circuits shown or represent that they are free from patent infringement The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available...