BIPOLAR ANALOG INTEGRATED CIRCUIT
LOW NOISE, HIGH FREQUENCY Si MMIC AMPLIFIER
The µPC1658G is a silicon monolithic integrated circuit designed as amplifier for high frequency system
applications. Bandwidth and output power level can be determined according to external resistor constants of
negative feedback and final stage collector. This IC is available in 8-pin plastic SOP.
This IC is manufactured using NEC’s 10 GHz fT NESATTM II silicon bipolar process. This process uses silicon
nitride passivation film and gold electrodes. These materials can protect chip surface from external pollution and
prevent corrosion/migration. Thus, this IC has excellent performance, uniformity and reliability.
• Low noise figure
: NF ≤ 3 dB
• Due to the external negative feedback circuit, the power gain can be adjustable by selecting appropriate
: GP ≥ 40 dB @ Without negative feedback resistor
: GP ≥ 18 dB @ With negative feedback resistor
• Wideband response
: f3dB = 1.0 GHz @ GP = 18 dB
• External resistor can vary the collector current of the final transistor in the IC to adjust the saturated output level.
• IF buffer amplifier of high frequency system
• Measurement equipment
8-pin plastic SOP (225 mil)
Embossed tape 12 mm wide.
1 pin is tape pull-out direction.
Qty 2.5 kp/reel.
Remark To order evaluation samples, please contact your local NEC sales office.
(Part number for sample order: µPC1658G)
Caution TO-99 CAN package (µPC1658A) and 8-pin plastic DIP package (µPC1658C) products are
Caution Electro-static sensitive devices
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P11120EJ3V0DS00 (3rd edition)
Date Published September 1999 N CP(K)
Printed in Japan
The mark shows major revised points.