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UPC1675G Dataheets PDF



Part Number UPC1675G
Manufacturers NEC
Logo NEC
Description GENERAL PURPOSE WIDE BNAD AMPLIFIER
Datasheet UPC1675G DatasheetUPC1675G Datasheet (PDF)

DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC1675G GENERAL PURPOSE WIDE BNAD AMPLIFIER DESCRIPTION The µPC1675G is a silicon monolithic integrated circuit employing small package (4pins mini mold) and designed for use as a wide bnad amplifier convers from HF band to UHF band. FEATURES • Excellent frequency response : 1.9 GHz TYP. @ 3 dB down below flat gain. • High isolation. • Super small package. • Uni- and low voltage operation : VCC = 5 V • Input and output matching 50 Ω. ABSOLUTE M.

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DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC1675G GENERAL PURPOSE WIDE BNAD AMPLIFIER DESCRIPTION The µPC1675G is a silicon monolithic integrated circuit employing small package (4pins mini mold) and designed for use as a wide bnad amplifier convers from HF band to UHF band. FEATURES • Excellent frequency response : 1.9 GHz TYP. @ 3 dB down below flat gain. • High isolation. • Super small package. • Uni- and low voltage operation : VCC = 5 V • Input and output matching 50 Ω. ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Supply Voltage Total Power Dissipation Operating Temperature Storage Temperature VCC PT Topt Tstg 6 200 −40 to +85 −55 to +150 V mW °C °C ELECTRICAL CHARACTERISTICS (TA = 25 °C, VCC = 5 V) CHARACTERISTIC Circuit Current Power Gain Noise Figure Upper Limit Operating Frequency Isolation Input Return Loss Output Return Loss Maximum Output Level SYMBOL ICC GP NF fu ISL RLin RLout PO 1.6 21 9 8 2 MIN. 12 10 TYP. 17 12 5.5 1.9 25 12 11 4 MAX. 22 14 7.0 UNIT mA dB dB GHz dB dB dB dBm TEST CONDITIONS No Signal f = 0.5 GHz f = 0.5 GHz 3 dB down below flat gain f = 0.5 GHz f = 0.5 GHz f = 0.5 GHz f = 0.5 GHz, Pin = 0 dBm NEC cannot assume any responsibility for any circuits shown or represent that they are free from patent infringement. Document No. P12446EJ2V0DS00 (2nd edition) (Previous No. IC-1890) Date Published March 1997 N Printed in Japan © 1989 µPC1675G TYPICAL CHARACTERISTICS (TA = 25 °C) CIRCUIT CURRENT vs. SUPPLY VOLTAGE 25 ICC-Circuit Current-mA 20 ICC-Circuit Current-mA 30 CIRCUIT CURRENT vs. OPERATING TEMPERATURE 20 15 10 5 10 0 0 1 2 3 4 5 6 VCC-Supply Voltage-V −50 0 50 100 Topt-Operating Temperature-°C 20 GP-Insertion Power Gain-dB 10 NF-Noise Figure-dB 7.5 5 2.5 0 16 NOISE FIGURE AND INSERTION POWER GAIN vs. FREQUENCY GP-Insertion Power Gain-dB 20 16 12 INSERTION POWER GAIN vs. FREQUENCY VCC = 5 V TA = −40 °C VCC = 5.5 V GP 12 NF 8 4.5 V 4 0 5.0 V +25 °C 8 +85 °C 4 0 60 100 200 500 1000 2000 60 100 200 500 1000 2000 f-Frequency-MHz f-Frequency-MHz REVERSE INSERTION GAIN vs. FREQUENCY 0 RLin-Input Return Loss-dB RLout-Output Return Loss-dB VCC = 5 V 0 INPUT AND OUTPUT RETURN LOSS vs. FREQUENCY VCC = 5 V ISL-Isolation-dB −10 −10 RLin RLout −20 −20 −30 60 100 200 500 1000 2000 −30 60 100 200 500 1000 2000 f-Frequency-MHz f-Frequency-MHz 2 µPC1675G OUTPUT POWER vs. INPUT POWER 5 Po-Output Power-dBm VCC = 5 V, f = 500 MHz 0 −5 −10 −15 −20 −30 IM3-3rd Order Intermodulation Distortion-dBc THIRD ORDER INTERMODULATION DISTORTION vs. OUTPUT POWER OF EACH TONE f1 = 500 MHz f2 = 504 MHz −50 −40 5.5 V −30 5.0 V 4.5 V −20 −25 −20 −15 −10 −5 0 Pin-Input Power-dBm −10 −20 −10 Pout-Output Power of Each Tone-dBm 0 S-PARAMETER VCC = 5 V, ZO = 50 f (MHz) 100 200 400 600 800 1000 1200 1400 1600 1800 2000 S11 0.284 0.287 0.270 0.228 0.178 0.136 0.120 0.122 0.124 0.114 0.085 ∠ S11 −27.1 −55.4 −114.3 −173.0 132.5 85.8 46.0 3.6 −45.4 −98.5 −55.6 S21 3.853 3.877 3.933 4.039 4.167 4.239 4.160 3.894 3.512 3.083 2.661 ∠ S21 −33.8 −67.6 −135.5 155.7 85.3 12.8 −61.0 −135.0 152.1 81.2 12.1 S12 0.065 0.064 0.059 0.054 0.052 0.053 0.060 0.068 0.078 0.088 0.098 ∠ S12 −27.0 −51.4 −98.3 −142.3 177.3 138.4 97.5 53.3 6.4 −42.4 −92.6 S22 0.225 0.235 0.266 0.294 0.305 0.283 0.229 0.156 0.084 0.048 0.067 ∠ S22 159.1 95.7 15.6 −60.1 −134.3 151.9 80.2 13.3 −40.9 −56.1 −75.0 3 µPC1675G PACKAGE DIMENSIONS EQUIVALENT CIRCUIT +VCC PACKAGE DIMENSIONS (Units: mm) 0.4 −0.05 0.4 −0.05 2.8 −0.3 1.5 2 +0.2 +0.1 +0.1 +0.2 −0.1 OUT (1.8) 0.95 0.95 2.9±0.2 3 (1.9) IN 1 4 0.6 −0.05 5° 5° 0.4 −0.05 +0.1 +0.1 GND 0.16 −0.06 +0.2 −3.1 1.1 0.8 5° 0 to 0.1 5° PIN CONNECTIONS 1. GND 2. OUTPUT 3. VCC 4. INPUT 4 +0.1 µPC1675G [MEMO] 5 µPC1675G [MEMO] 6 µPC1675G [MEMO] 7 µPC1675G No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Spe.


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