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UPC1676G Dataheets PDF



Part Number UPC1676G
Manufacturers NEC
Logo NEC
Description GENERAL PURPOSE WIDE BNAD AMPLIFIER
Datasheet UPC1676G DatasheetUPC1676G Datasheet (PDF)

DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC1676G GENERAL PURPOSE WIDE BNAD AMPLIFIER DESCRIPTION The µPC1676G is a silicon monolithic integrated circuit employing small package (4pins mini mold) and designed for use as a wide band amplifier covers from HF band to UHF band. FEATURES • Excellent frequency response : 1.2 GHz TYP. @ 3 dB down below flat gain. • High power gain : 22 dB TYP. @ f = 0.5 GHz. • High isolation. • Super small package. • Uni- and low voltage operation : VCC = 5 V .

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DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC1676G GENERAL PURPOSE WIDE BNAD AMPLIFIER DESCRIPTION The µPC1676G is a silicon monolithic integrated circuit employing small package (4pins mini mold) and designed for use as a wide band amplifier covers from HF band to UHF band. FEATURES • Excellent frequency response : 1.2 GHz TYP. @ 3 dB down below flat gain. • High power gain : 22 dB TYP. @ f = 0.5 GHz. • High isolation. • Super small package. • Uni- and low voltage operation : VCC = 5 V • Input and output matching 50 Ω. ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Supply Voltage Total Power Dissipation Operating Temperature Storage Temperature VCC PT Topt Tstg 6 200 −40 to +85 −55 to +150 V mW °C °C ELECTRICAL CHARACTERISTICS (TA = 25 °C, VCC = 5 V) CHARACTERISTIC Circuit Current Power Gain Noise Figure Upper Limit Operating Frequency Isolation Input Return Loss Output Return Loss Maximum Output Level SYMBOL ICC GP NF fu ISL RLin RLout PO 1.0 24 9 6 3 MIN. 14 19 TYP. 19 22 4.5 1.2 28 12 9 5 MAX. 24 24 6.0 UNIT mA dB dB GHz dB dB dB dBm TEST CONDITIONS No Signal f = 0.5 GHz f = 0.5 GHz 3 dB down below flat gain f = 0.5 GHz f = 0.5 GHz f = 0.5 GHz f = 0.5 GHz, Pin = 0 dBm NEC cannot assume any responsibility for any circuits shown or represent that they are free from patent infringement. Document No. P12447EJ2V0DS00 (2nd edition) (Previous No. IC-1891) Date Published March 1997 N Printed in Japan © 1989 µPC1676G TYPICAL CHARACTERISTICS (TA = 25 °C) CIRCUIT CURRENT vs. SUPPLY VOLTAGE 25 ICC-Circuit Current-mA CIRCUIT CURRENT vs. OPERATING TEMPERATURE 30 ICC-Circuit Current-mA 20 20 15 10 5 10 0 0 1 2 3 4 5 6 VCC-Supply Voltage-V −50 0 50 100 Topt-Operating Temperature-°C 30 GP-Insertion Power Gain-dB NOISE FIGURE AND INSERTION POWER GAIN vs. FREQUENCY VCC = 5.5 V 5.0 V GP 4.5 V GP-Insertion Power Gain-dB 30 INSERTION POWER GAIN vs. FREQUENCY VCC = 5 V TA = −40 °C 10 NF-Noise Figure-dB 20 NF VCC = 5.5 V 10 5.0 V 4.5 V 0 60 100 200 500 1000 2000 20 +25 °C 10 +85 °C 5 0 0 60 100 200 500 1000 2000 f-Frequency-MHz f-Frequency-MHz REVERSE INSERTION GAIN vs. FREQUENCY 0 RLin-Input Return Loss-dB RLout-Output Return Loss-dB INPUT AND OUTPUT RETURN LOSS vs. FREQUENCY VCC = 5 V 0 VCC = 5 V ISL-Isolation-dB −10 −10 RLout −20 −20 RLin −30 60 100 200 500 1000 2000 −30 60 100 200 500 1000 2000 f-Frequency-MHz f-Frequency-MHz 2 µPC1676G OUTPUT POWER vs. INPUT POWER VCC = 5 V f = 500 MHz THIRD ORDER INTERMODULATION DISTORTION vs. OUTPUT POWER OF EACH TONE f1 = 500 MHz f2 = 504 MHz −50 5.5 V 10 IM3-3rd Order Intermodulation Distortion-dBc Po-Output Power-dBm −40 5.0 V 4.5 V 0 −30 −10 −20 −20 −30 −20 −10 0 −10 −20 −10 Pout-Output Power of Each Tone-dBm 0 Pin-Input Power-dBm S-PARAMETER VCC = 5 V, ZO = 50 f (MHz) 100 200 400 600 800 1000 1200 1400 1600 S11 0.072 0.093 0.175 0.355 0.485 0.387 0.298 0.243 0.208 ∠ S11 −26.5 −63.5 −120.4 −176.4 118.7 77.5 59.2 50.5 47.1 S21 8.955 9.327 11.021 14.504 14.530 9.478 6.301 4.562 3.506 ∠ S21 −15.3 −31.3 −66.2 −114.3 177.1 123.1 85.6 53.8 24.5 S12 0.034 0.035 0.038 0.042 0.037 0.044 0.057 0.070 0.083 ∠ S12 −2.0 −3.4 −8.4 −18.4 −25.7 −20.5 −28.3 −41.5 −56.4 S22 0.220 0.233 0.303 0.408 0.361 0.231 0.251 0.292 0.313 ∠ S22 171.2 161.3 139.4 107.7 65.5 61.6 68.0 61.9 51.5 3 µPC1676G PACKAGE DIMENSIONS EQUIVALENT CIRCUIT +VCC PACKAGE DIMENSIONS (Units: mm) 0.4 −0.05 0.4 −0.05 2.8 −0.3 1.5 2 +0.2 +0.1 +0.1 +0.2 −0.1 OUT (1.8) 0.95 0.95 2.9±0.2 3 (1.9) IN 1 4 0.6 −0.05 5° 5° 0.4 −0.05 +0.1 +0.1 GND 0.16 −0.06 +0.2 −3.1 1.1 0.8 5° 0 to 0.1 5° PIN CONNECTIONS 1. GND 2. OUTPUT 3. VCC 4. INPUT 4 +0.1 µPC1676G [MEMO] 5 µPC1676G [MEMO] 6 µPC1676G [MEMO] 7 µPC1676G No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer .


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