2 GHz MEDIUM POWER BROADBAND SILICON MMIC AMPLIFIER
DATA SHEET DATA SHEET
BIPOLAR ANALOG INTEGRATED CIRCUIT
µPC1678G
5 V-BIAS, +17.5 dBm OUTPUT, 2.0 GHz WIDEBAND Si MMIC...
Description
DATA SHEET DATA SHEET
BIPOLAR ANALOG INTEGRATED CIRCUIT
µPC1678G
5 V-BIAS, +17.5 dBm OUTPUT, 2.0 GHz WIDEBAND Si MMIC AMPLIFIER
DESCRIPTION
The µPC1678G is a silicon monolithic integrated circuit designed as medium output power amplifier for high frequency system applications. Due to +17.5 dBm TYP. output at 2 GHz, this IC is recommendable for transmitter stage amplifier of L BAND wireless communication systems. This IC is packaged in 8-pin plastic SOP. This IC is manufactured using NEC’s 20 GHz fT NESAT™IV silicon bipolar process. This process uses silicon nitride passivation film and gold electrodes. These materials can protect chip surface from external pollution and prevent corrosion/migration. Thus, this IC has excellent performance, uniformity and reliability.
FEATURES
Supply voltage Saturated output power Wideband response Power gain Isolation : VCC = 4.5 to 5.5 V : PO(sat) = +17.5 dBm TYP. @ f = 500 MHz with external inductor : fu = 2.0 GHz TYP. @ 3 dB bandwidth : GP = 23 dB TYP. @ f = 500 MHz : ISL = 35 dB TYP. @ f = 500 MHz
APPLICATIONS
PA driver for high frequency system.
ORDERING INFORMATION
Part Number Package Marking Supplying Form
µPC1678G µPC1678G -E1
8-pin plastic SOP (225 mil)
1678
Plastic magazine case Embossed tape 12 mm wide. 1 pin is tape pull-out direction. Qty 2.5 kp/reel. Embossed tape 12 mm wide. 1 pin is tape roll-in direction. Qty 2.5 kp/reel.
µPC1678G -E2
Remark
To order evaluation samples, please contact your local NEC s...
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