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UPC1679G Dataheets PDF



Part Number UPC1679G
Manufacturers NEC
Logo NEC
Description 5 V-BIAS/ +5.5 dBm OUTPUT/ 1.8 GHz WIDEBAND Si MMIC AMPLIFIER
Datasheet UPC1679G DatasheetUPC1679G Datasheet (PDF)

DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC1679G 5 V-BIAS, +15.5 dBm OUTPUT, 1.8 GHz WIDEBAND Si MMIC AMPLIFIER DESCRIPTION The µPC1679G is a silicon monolithic integrated circuit designed as medium output power amplifier for high frequency system applications. Due to +13 dBm TYP. output at 1 GHz, this IC is recommendable for transmitter stage amplifier of L Band wireless communication systems. This IC is packaged in 8-pin plastic SOP. This IC is manufactured using NEC’s 20 GHz fT NESAT.

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DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC1679G 5 V-BIAS, +15.5 dBm OUTPUT, 1.8 GHz WIDEBAND Si MMIC AMPLIFIER DESCRIPTION The µPC1679G is a silicon monolithic integrated circuit designed as medium output power amplifier for high frequency system applications. Due to +13 dBm TYP. output at 1 GHz, this IC is recommendable for transmitter stage amplifier of L Band wireless communication systems. This IC is packaged in 8-pin plastic SOP. This IC is manufactured using NEC’s 20 GHz fT NESATTMIV silicon bipolar process. This process uses silicon nitride passivation film and gold electrodes. These materials can protect chip surface from external pollution and prevent corrosion/migration. Thus, this IC has excellent performance, uniformity and reliability. FEATURES • Supply voltage • Saturated output power • Wideband response • Isolation • Power Gain : VCC = 4.5 to 5.5 V : PO(sat) = +15.5 dBm TYP. @ f = 500 MHz with external inductor : fu = 1.8 GHz TYP. @ 3 dB bandwidth : ISL = 34 dB TYP. @ f = 500 MHz : GP = 21.5 dB TYP. @ f = 500 MHz ORDERING INFORMATION Part Number Package 8-pin plastic SOP (225 mil) Marking 1679 Supplying Form Embossed tape 12 mm wide. 1 pin is tape pull-out direction. Qty 2.5 kp/reel. Embossed tape 12 mm wide. 1 pin is tape roll-in direction. Qty 2.5 kp/reel. µPC1679G-E1 µPC1679G-E2 Remark To order evaluation samples, please contact your local NEC sales office. (Part number for sample order: µPC1679G) Caution Electro-static sensitive devices. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. P12434EJ4V0DS00 (4th edition) Date Published September 1999 N CP(K) Printed in Japan The mark shows major revision points. © 1994, 1999 µPC1679G EQUIVALENT CIRCUIT 8 VCC 5 OUT PIN CONNECTIONS (Top View) INPUT GND GND 1 2 3 4 8 7 6 5 VCC GND GND OUTPUT IN 1 GND 6 7 2 3 4 ABSOLUTE MAXIMUM RATINGS Parameter Supply Voltage Input Power Power Dissipation Symbol VCC Pin PD Conditions TA = +25 °C, pin 5, pin 8 TA = +25 °C Mounted on double copper clad 50 × 50 × 1.6 mm epoxy glass PWB (TA = +85 °C) Rating 6 +10 360 −45 to +85 −55 to +150 Unit V dBm mW Operating Ambient Temperature Storage Temperature TA Tstg °C °C RECOMMENDED OPERATING RANGE Parameter Supply Voltage Symbol VCC MIN. 4.5 −45 TYP. 5.0 MAX. 5.5 Unit V Notice The same voltage should be applied to pin 5 and 8 Operating Ambient Temperature TA +25 +85 °C ELECTRICAL CHARACTERISTICS (TA = +25 °C, VCC = Vout = 5.0 V, ZS = ZL = 50 Ω) Parameter Circuit Current Power Gain Noise Figure Upper Limit Operating Frequency Isolation Input Return Loss Output Return Loss Saturated Output Power Symbol ICC GP NF fu ISL RLin RLout PO(sat) No signal f = 500 MHz f = 500 MHz 3 dB down below the gain at 0.1 GHz f = 500 MHz f = 500 MHz f = 500 MHz f = 500 MHz, Pin = +3 dBm Conditions MIN. 32 19.5 − 1.5 29 9 1 +13.5 TYP. 40 21.5 6.0 1.8 34 12 3 +15.5 MAX. 49 23.5 8.0 − − − − − Unit mA dB dB GHz dB dB dB dBm 2 Data Sheet P12434EJ4V0DS00 µPC1679G TEST CIRCUIT VCC 1 800 pF C3 8 50 Ω IN 1 800 pF C1 1 5 1 800 pF L C2 L: 20.5 T, 2 mm I.D., φ 0.25 UEW (about 300 nH) 50 Ω OUT 2, 3, 4, 6, 7 INDUCTOR FOR THE OUTPUT PIN The internal output transistor of this IC consumes 30 mA, to output medium power. To supply current for output transistor, connect an inductor between the VCC pin (pin 8) and output pin (pin 5). Select large value inductance, as listed above. The inductor has both DC and AC effects. In terms of DC, the inductor biases the output transistor with minimum voltage drop to output enable high level. In terms of AC, the inductor make output-port impedance higher to get enough gain. In this case, large inductance and Q is suitable. CAPACITORS FOR THE VCC, INPUT AND OUTPUT PINS Capacitors of 1 800 pF are recommendable as the bypass capacitor for the VCC pin and the coupling capacitors for the input and output pins. The bypass capacitor connected to the VCC pin is used to minimize ground impedance of VCC pin. So, stable bias can be supplied against VCC fluctuation. The coupling capacitors, connected to the input and output pins, are used to cut the DC and minimize RF serial impedance. Their capacitance are therefore selected as lower impedance against a 50 Ω load. The capacitors thus perform as high pass filters, suppressing low frequencies to DC. To obtain a flat gain from 100 MHz upwards, 1 800 pF capacitors are used in the test circuit. In the case of under 10 MHz operation, increase the value of coupling capacitor such as 10 000 pF. Because the coupling capacitors are determined by equation, C = 1/(2 πRfc). Data Sheet P12434EJ4V0DS00 3 µPC1679G TYPICAL CHARACTERISTICS (Unless otherwise specified, TA = +25 °C) CIRCUIT CURRENT vs. SUPPLY VOLTAGE 60 No Signal 50 50 60 No Signal VCC = 5.0 V CI.


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