UPC1679G-E2

DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC1679G 5 V-BIAS, +15.5 dBm OUTPUT, 1.8 GHz WIDEBAND Si MMIC AMPLIFIER DESCRIPTION The µPC1679G is a silicon monolithic integrated circuit designed as medium output power amplifier for high frequency system applications. Due to +13 dBm TYP. output at 1 GHz, this IC is recommendable for transmitter stage amplifier of L Band wireless communication systems. This IC is packaged in 8-pin plastic SOP. This IC is manufactured using NEC’s 20 GHz fT NESATTMIV silicon bipolar process. This process uses silicon nitride passivation film and gold electrodes. These materials can protect chip surface from external pollution and prevent corrosion/migration. Thus, this IC has excellent performance, uniformity and reliability. FEATURES Supply voltage Saturated output power Wideband response Isolation Power Gain : VCC = 4.5 to 5.5 V : PO(sat) = +15.5 dBm TYP. @ f = 500 MHz with external inductor : fu = 1.8 GHz TYP. @ 3 dB bandwidth : ISL = 34 dB TYP. @ f = 500 MHz : GP = 21.5 dB TYP. @ f = 500 MHz ORDERING INFORMATION Part Number Package 8-pin plastic SOP (225 mil) Marking 1679 Supplying Form Embossed tape 12 mm wide. 1 pin is tape pull-out direction. Qty 2.5 kp/reel. Embossed tape 12 mm wide. 1 pin is tape roll-in direction. Qty 2.5 kp/reel. µPC1679G-E1 µPC1679G-E2 Remark To order evaluation samples, please contact your local NEC sales office. (Part number for sample order: µPC1679G) Caution Electro-static sensitive devices. Th...