UPC1679G-E2 MMIC AMPLIFIER Datasheet

UPC1679G-E2 Datasheet, PDF, Equivalent


Part Number

UPC1679G-E2

Description

5 V-BIAS/ +5.5 dBm OUTPUT/ 1.8 GHz WIDEBAND Si MMIC AMPLIFIER

Manufacture

NEC

Total Page 12 Pages
Datasheet
Download UPC1679G-E2 Datasheet


UPC1679G-E2
DATA SHEET
BIPOLAR ANALOG INTEGRATED CIRCUIT
µPC1679G
5 V-BIAS, +15.5 dBm OUTPUT, 1.8 GHz WIDEBAND
Si MMIC AMPLIFIER
DESCRIPTION
The µPC1679G is a silicon monolithic integrated circuit designed as medium output power amplifier for high
frequency system applications. Due to +13 dBm TYP. output at 1 GHz, this IC is recommendable for transmitter
stage amplifier of L Band wireless communication systems. This IC is packaged in 8-pin plastic SOP.
This IC is manufactured using NEC’s 20 GHz fT NESATTMIV silicon bipolar process. This process uses silicon
nitride passivation film and gold electrodes. These materials can protect chip surface from external pollution and
prevent corrosion/migration. Thus, this IC has excellent performance, uniformity and reliability.
FEATURES
• Supply voltage
• Saturated output power
• Wideband response
• Isolation
• Power Gain
: VCC = 4.5 to 5.5 V
: PO(sat) = +15.5 dBm TYP. @ f = 500 MHz with external inductor
: fu = 1.8 GHz TYP. @ 3 dB bandwidth
: ISL = 34 dB TYP. @ f = 500 MHz
: GP = 21.5 dB TYP. @ f = 500 MHz
ORDERING INFORMATION
Part Number
µPC1679G-E1
µPC1679G-E2
Package
8-pin plastic SOP (225 mil)
Marking
1679
Supplying Form
Embossed tape 12 mm wide.
1 pin is tape pull-out direction.
Qty 2.5 kp/reel.
Embossed tape 12 mm wide.
1 pin is tape roll-in direction.
Qty 2.5 kp/reel.
Remark To order evaluation samples, please contact your local NEC sales office.
(Part number for sample order: µPC1679G)
Caution Electro-static sensitive devices.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P12434EJ4V0DS00 (4th edition)
Date Published September 1999 N CP(K)
Printed in Japan
The mark shows major revision points.
©
1994, 1999

UPC1679G-E2
EQUIVALENT CIRCUIT
IN 1
µPC1679G
PIN CONNECTIONS
8 VCC
5 OUT
INPUT 1
GND 2
(Top View)
GND 3
GND 4
8 VCC
7 GND
6 GND
5 OUTPUT
67
234
ABSOLUTE MAXIMUM RATINGS
Parameter
Supply Voltage
Input Power
Power Dissipation
Operating Ambient Temperature
Storage Temperature
Symbol
VCC
Pin
PD
TA
Tstg
Conditions
TA = +25 °C, pin 5, pin 8
TA = +25 °C
Mounted on double copper clad 50 × 50 × 1.6 mm
epoxy glass PWB (TA = +85 °C)
Rating
6
+10
360
45 to +85
55 to +150
Unit
V
dBm
mW
°C
°C
RECOMMENDED OPERATING RANGE
Parameter
Supply Voltage
Operating Ambient Temperature
Symbol
VCC
MIN.
4.5
TA 45
TYP.
5.0
MAX.
5.5
+25 +85
Unit Notice
V The same voltage should be applied
to pin 5 and 8
°C
ELECTRICAL CHARACTERISTICS (TA = +25 °C, VCC = Vout = 5.0 V, ZS = ZL = 50 )
Parameter
Circuit Current
Power Gain
Noise Figure
Upper Limit Operating Frequency
Isolation
Input Return Loss
Output Return Loss
Saturated Output Power
Symbol
ICC
GP
NF
fu
ISL
RLin
RLout
PO(sat)
Conditions
No signal
f = 500 MHz
f = 500 MHz
3 dB down below the gain at 0.1 GHz
f = 500 MHz
f = 500 MHz
f = 500 MHz
f = 500 MHz, Pin = +3 dBm
MIN.
32
19.5
1.5
29
9
1
+13.5
TYP.
40
21.5
6.0
1.8
34
12
3
+15.5
MAX.
49
23.5
8.0
Unit
mA
dB
dB
GHz
dB
dB
dB
dBm
2 Data Sheet P12434EJ4V0DS00


Features DATA SHEET BIPOLAR ANALOG INTEGRATED CI RCUIT µPC1679G 5 V-BIAS, +15.5 dBm O UTPUT, 1.8 GHz WIDEBAND Si MMIC AMPLIFI ER DESCRIPTION The µPC1679G is a sili con monolithic integrated circuit desig ned as medium output power amplifier fo r high frequency system applications. D ue to +13 dBm TYP. output at 1 GHz, thi s IC is recommendable for transmitter s tage amplifier of L Band wireless commu nication systems. This IC is packaged i n 8-pin plastic SOP. This IC is manufac tured using NEC’s 20 GHz fT NESATTMIV silicon bipolar process. This process uses silicon nitride passivation film a nd gold electrodes. These materials can protect chip surface from external pol lution and prevent corrosion/migration. Thus, this IC has excellent performanc e, uniformity and reliability. FEATURE S • Supply voltage • Saturated outp ut power • Wideband response • Isol ation • Power Gain : VCC = 4.5 to 5.5 V : PO(sat) = +15.5 dBm TYP. @ f = 500 MHz with external inductor : fu = 1.8 GHz TYP. @ 3 dB bandwidth : ISL = 34 d.
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