UPC2726T

DATA SHEET BIPOLAR NALOG NTEGRATED IRCUIT µPC2726T 1.6 GHz DIFFERENTIAL WIDE BAND AMPLIFIER SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT DESCRIPTION The µPC2726T is a silicon microwave monolithic integrated circuit designed for miniature differenctial amplifier. This IC operates up to 1.6 GHz and therefore is suitable for BS tuner, mobile communication and measurement equipment applications. This IC can also use as differential oscillator application. The µPC27×× series is manufactured using NEC’s 20 GHz fT NESATTM III silicon bipolar process. This process uses silicon nitride passivation film and gold metallization wirings. external pollution and prevent corrosion and migration. performance, uniformity and reliability. These materials can protect the chips from Thus, this process can produce the ICs with excellent FEATURES Wide frequency respone − fU= 1.6 GHz @ −3 dB GP, VCC = 5 V Power gain − GP = 15 dB @ 5 V Low power consumption: 5 V, 15 mA TYP./2 V, 2.5 mA 6 pin mini mold for high-density surface mounting. ORDERING INFORMATION PART NUMBER PACKAGE 6 pin mini mold SUPPLYING FORM Embossed tape 8 mm wide. 3 kp/reel. Pin 1, 2, 3 face to perforation side of the tape. µPC2726T-E3 * For evaluation sample order, please contact your local NEC sales office. (Part number: µPC2726T) EQUIVALENT CIRCUIT <5> VCC PIN CONNECTIONS (Top View) (Bottom View) RF OUT <4> RF IN <6> <3> RF OUT <1> RF IN 3 2 1 C1P 4 5 6 1. INPUT 2. GND 3. OUTPUT 4. OUTPUT 5. VCC 6. INPUT 4...