3 V/ 2.9 GHz SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER FOR MOBILE COMMUNICATIONS
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3V, 2400 MHz MEDIUM POWER SI MMIC AMPLIFIER
FEATURES
• HIGH GAIN: 20 dB at 900 to 1500 MHz Typical ...
www.DataSheet4U.com
3V, 2400 MHz MEDIUM POWER SI MMIC AMPLIFIER
FEATURES
HIGH GAIN: 20 dB at 900 to 1500 MHz Typical HIGH OUTPUT POWER: PSAT = +12.5 dBm at 900 MHz +11 dBm at 1500 MHz
Gain, GS (dB)
UPC2771T
GAIN vs. FREQUENCY AND TEMPERATURE
24 TA = -40˚ C 22
LOW BIAS VOLTAGE: 3.0 V Typical, 2.7 V Minimum SUPER SMALL PACKAGE TAPE AND REEL PACKAGING OPTION AVAILABLE
20
+85˚ C TA = +25˚ C TA = +85˚ C
18
16
DESCRIPTION
The UPC2771T is a Silicon Monolithic integrated circuit which is manufactured using the NESAT III process. The NESAT III process produces
transistors with fT approaching 20 GHz. This amplifier was designed as a driver amplifier for digital cellular applications. Operating on a 3 volt supply, this IC is ideally suited for hand-held, portable designs. NEC's stringent quality assurance and test procedures ensure the highest reliability and performance.
14
+25˚ C -40˚ C VCC = 3.0 V
0.1
0.3
1.0
3.0
Frequency, f (GHz)
ELECTRICAL CHARACTERISTICS (TA = 25°C, ZL = ZS = 50 Ω, VCC = 3.0 V)
PART NUMBER PACKAGE OUTLINE SYMBOLS ICC GS fU P1dB PSAT NF RLIN RLOUT ISOL OIP3 Small Signal Gain, PARAMETERS AND CONDITIONS Circuit Current (no signal) f = 900 MHz f = 1500 MHz f = 900 MHz f = 1500 MHz f = 900 MHz f = 1500 MHz f = 900 MHz f = 1500 MHz f = 900 MHz f = 1500 MHz f = 900 MHz f = 1500 MHz f = 900 MHz f = 1500 MHz f = 900, 902 MHz f = 1500, 1502 MHz UNITS mA dB dB GHz dBm dBm dBm dBm dB dB dB dB dB dB dB dB dBm dBm 10 10 6.5 5.5 25 25 19 17 1.7 +9 +7 M...