5 V/ SUPER MINIMOLD SILICON MMIC WIDEBAND AMPLIFIER
DATA SHEET
BIPOLAR ANALOG INTEGRATED CIRCUIT
µPC3210TB
5 V, SUPER MINIMOLD SILICON MMIC WIDEBAND AMPLIFIER
DESCRIPTI...
Description
DATA SHEET
BIPOLAR ANALOG INTEGRATED CIRCUIT
µPC3210TB
5 V, SUPER MINIMOLD SILICON MMIC WIDEBAND AMPLIFIER
DESCRIPTION
The µPC3210TB is a silicon monolithic integrated circuits designed as wideband amplifier. The µPC3210TB is suitable to systems required wideband operation from HF to L band. This IC is manufactured using NEC’s 20 GHz fT NESAT™III silicon bipolar process. This process uses silicon nitride passivation film and gold electrodes. These materials can protect chip surface from external pollution and prevent corrosion/migration. Thus, this IC has excellent performance, uniformity and reliability.
FEATURES
High-density surface mounting: 6-pin super minimold package Supply voltage Wideband response Power gain Noise figure : VCC = 4.5 to 5.5 V : fu = 2.3 GHz TYP. @3 dB bandwidth : GP = 20 dB TYP. @f = 1.5 GHz : NF = 3.4 dB TYP. @f = 1.5 GHz
APPLICATION
Systems required wideband operation from HF to 2.0 GHz
ORDERING INFORMATION
Part Number Package 6-pin super minimold Marking C2X Supplying Form Embossed tape 8 mm wide. 1, 2, 3 pins face to perforation side of the tape. Qty 3 kp/reel.
µPC3210TB-E3
Remark
To order evaluation samples, please contact your local NEC sales office. (Part number for sample order: µPC3210TB)
Caution Electro-static sensitive devices
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
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