SILICON MMIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS
SILICON MMIC LOW CURRENT AMPLIFIER UPC8179TK FOR MOBILE COMMUNICATIONS
FEATURES
• HIGH DENSITY SURFACE MOUNTING: 6 Pin L...
Description
SILICON MMIC LOW CURRENT AMPLIFIER UPC8179TK FOR MOBILE COMMUNICATIONS
FEATURES
HIGH DENSITY SURFACE MOUNTING: 6 Pin Leadless Minimold Package (1.5 x 1.1 x 0.55 mm) SUPPLY VOLTAGE: VCC = 2.4 to 3.3 V HIGH EFFICIENCY: PO(1dB) = +2.0 dBm TYP at f = 1.0 GHz PO(1dB) = +0.5 dBm TYP at f = 1.9 GHz PO(1dB) = +0.5 dBm TYP at f = 2.4 GHz POWER GAIN: GP = 13.5 dB TYP at f = 1.0 GHz GP = 15.5 dB TYP at f = 1.9 GHz GP = 16.0 dB TYP at f = 2.4 GHz EXCELLENT ISOLATION: ISL = 43 dB TYP at f = 1.0 GHz ISL = 42 dB TYP at f = 1.9 GHz ISL = 42 dB TYP at f = 2.4 GHz LOW CURRENT CONSUMPTION: ICC = 4.0 mA TYP AT VCC = 3.0 V OPERATING FREQUENCY: 0.1 to 2.4 GHz (Output port LC matching) LIGHT WEIGHT: 3 mg
Top View
OUTLINE DIMENSIONS (Units in mm)
PACKAGE OUTLINE TK
1.3±0.05
1.1±0.1
0.1
Bottom View
0.16±0.05
1.5±0.1
0.96
0.48
0.48
0.2±0.1 (0.9)
0.55±0.03
0.11±+0.1 -0.05
DESCRIPTION
NEC's UPC8179TK is a silicon monolithic integrated circuit designed as an amplifier for mobile communications. This IC can realize low current consumption with external chip inductor. The incorporation of a chip identical to the conventional 6pin super minimold package (2.0 x 1.25 x 0.9 mm) µPC8179TB in a 6-pin leadless minimold package (1.5 x 1.1 x 0.55 mm) has enabled a reduction in mounting area of 50 %. The µPC8179TK is ideally suited to replace the µPC8179TB for footprint reduction and increased design density. This IC is manufactured using NEC's 30 GHz fMAX UHS0 (Ultra High Speed Process) ...
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