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UPD16837

NEC

MONOLITHIC QUAD H BRIDGE DRIVER

DATA SHEET MOS INTEGRATED CIRCUIT µPD16837 MONOLITHIC QUAD H BRIDGE DRIVER DESCRIPTION The µPD16837 is a monolithic q...


NEC

UPD16837

File Download Download UPD16837 Datasheet


Description
DATA SHEET MOS INTEGRATED CIRCUIT µPD16837 MONOLITHIC QUAD H BRIDGE DRIVER DESCRIPTION The µPD16837 is a monolithic quad H bridge driver employing power MOS FETs in the output stage. The MOS FETs in the output stage lower the saturation voltage and power consumption as compared with conventional drivers using bipolar transistors. In addition, a low-voltage malfunction prevention circuit is also provided that prevents the IC from malfunctioning when the supply voltage drops. A 30-pin plastic shrink SOP package is adopted to help create compact and slim application sets. In the output stage H bridge circuits, two low-ON resistance H bridge circuits for driving actuators, and another two channels for driving sled motors and loading motors are provided, making the product ideal for applications in CD-ROM and DVD. FEATURES Four H bridge circuits employing power MOS FETs High-speed PWM drive: Operating frequency: 120 kHz MAX. Low-voltage malfunction prevention circuit: Operating voltage: 2.5 V (TYP.) 30-pin shrink SOP (300 mil) ORDERING INFORMATION Part Number Package 30-pin plastic SSOP (300 mil) µPD16837GS ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Parameter Control block supply voltage Output block supply voltage Input voltage H bridge drive Power currentNote 1 Symbol VDD VM VIN IDR (pulse) PT TA TCH (MAX) Tstg PW ≤ 5 ms, Duty ≤ 30 % Conditions Rating –0.5 to +7.0 –0.5 to +15 –0.5 to VDD + 0.5 ±1.0 1.25 0 to 75 150 –55 to +150 Unit V V V A/phase W °C °C °C dissipation...




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