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UPD45128163 Datasheet, Equivalent, 4-bank/ LVTTL.

128M-bit Synchronous DRAM 4-bank/ LVTTL

128M-bit Synchronous DRAM 4-bank/ LVTTL

 

 

 

Part UPD45128163
Description 128M-bit Synchronous DRAM 4-bank/ LVTTL
Feature DATA SHEET MOS INTEGRATED CIRCUIT µPD 45128441, 45128841, 45128163 128M-bit S ynchronous DRAM 4-bank, LVTTL Descript ion The µPD45128441, 45128841, 4512816 3 are high-speed 134,217,728-bit synchr onous dynamic random-access memories, o rganized as 8,388,608 × 4 × 4, 4,194, 304 × 8 × 4, 2,097,152 × 16 × 4 (wo rd × bit × bank), respectively.
The s ynchronous DRAMs achieved high-speed da ta transfer using the pipeline architec ture.
All inputs and outputs are synchr onized with the positive edge of the cl ock.
The synchronous DRAMs are compatib le with Low Voltage TTL (LVTTL).
These products are packaged in .
Manufacture NEC
Datasheet
Download UPD45128163 Datasheet
Part UPD45128163
Description 128M-bit Synchronous DRAM 4-bank/ LVTTL
Feature DATA SHEET MOS INTEGRATED CIRCUIT µPD 45128441, 45128841, 45128163 128M-bit S ynchronous DRAM 4-bank, LVTTL Descript ion The µPD45128441, 45128841, 4512816 3 are high-speed 134,217,728-bit synchr onous dynamic random-access memories, o rganized as 8,388,608 × 4 × 4, 4,194, 304 × 8 × 4, 2,097,152 × 16 × 4 (wo rd × bit × bank), respectively.
The s ynchronous DRAMs achieved high-speed da ta transfer using the pipeline architec ture.
All inputs and outputs are synchr onized with the positive edge of the cl ock.
The synchronous DRAMs are compatib le with Low Voltage TTL (LVTTL).
These products are packaged in .
Manufacture NEC
Datasheet
Download UPD45128163 Datasheet

UPD45128163

UPD45128163
UPD45128163

UPD45128163

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