VTB1012B

VTB Process Photodiodes VTB1012B, 1013B PACKAGE DIMENSIONS inch (mm) CASE 17 TO-46 HERMETIC CHIP ACTIVE AREA: .0025 in2 (1.60 mm2) PRODUCT DESCRIPTION Small area planar silicon photodiode in a “flat” window, dual lead TO-46 package. The package incorporates an infrared rejection filter. Cathode is common to the case. These diodes have very high shunt resistance and have good blue response. ABSOLUTE MAXIMUM RATINGS Storage Temperature: Operating Temperature: -40°C to 110°C -40°C to 110°C ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also VTB curves, pages 21-22) VTB1012B SYMBOL ISC TC ISC VOC TC VOC ID RSH TC RSH CJ λrange λp VBR θ1/2 NEP D* CHARACTERISTIC Short Circuit Current ISC Temperature Coefficient Open Circuit Voltage VOC Temperature Coefficient Dark Current Shunt Resistance RSH Temperature Coefficient Junction Capacitance Spectral Application Range Spectral Response - Peak Breakdown Voltage Angular Resp. - 50% Resp. Pt. Noise Equivalent Power Specific Detectivity 2 TEST CONDITIONS Min. H = 100 fc, 2850 K 2850 K H = 100 fc, 2850 K 2850 K H = 0, VR = 2.0 V H = 0, V = 10 mV H = 0, V = 10 mV H = 0, V = 0 330 580 40 ±35 5.3 x 10-14 (Typ.) 2.4 x 10 12 (Typ.) 2 .25 -8.0 .31 720 330 580 40 ±35 1.1 x 10 -14 (Typ.) 1.2 x 10 13 (Typ.) 0.8 Typ. 1.3 .02 420 -2.0 100 7.0 -8.0 .31 720 .08 Max. Min. 0.8 Typ. 1.3 .02 420 -2.0 20 .08 Max. µA %/°C mV mV/°C pA GΩ %/°C nF nm nm V Degrees W ⁄ Hz cm Hz / W VTB1013B UNITS PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 6313...