VTB Process Photodiodes
VTB Process Photodiodes
VTB1112, 1113
PACKAGE DIMENSIONS inch (mm)
PRODUCT DESCRIPTION
Small area planar silicon phot...
Description
VTB Process Photodiodes
VTB1112, 1113
PACKAGE DIMENSIONS inch (mm)
PRODUCT DESCRIPTION
Small area planar silicon photodiode in a lensed, dual lead TO-46 package. Cathode is common to the case. These diodes have very high shunt resistance and have good blue response.
CASE 19 TO-46 LENSED HERMETIC CHIP ACTIVE AREA: .0025 in2 (1.60 mm2)
ABSOLUTE MAXIMUM RATINGS
Storage Temperature: Operating Temperature: -40°C to 110°C -40°C to 110°C
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also VTB curves, pages 21-22)
VTB1112
SYMBOL ISC TC ISC VOC TC VOC ID RSH TC RSH CJ SR λrange λp VBR θ1/2 NEP D* CHARACTERISTIC Short Circuit Current ISC Temperature Coefficient Open Circuit Voltage VOC Temperature Coefficient Dark Current Shunt Resistance RSH Temperature Coefficient Junction Capacitance Sensitivity Spectral Application Range Spectral Response - Peak Breakdown Voltage Angular Resp. - 50% Resp. Pt. Noise Equivalent Power Specific Detectivity 2 TEST CONDITIONS Min. H = 100 fc, 2850 K 2850 K H = 100 fc, 2850 K 2850 K H = 0, VR = 2.0 V H = 0, V = 10 mV H = 0, V = 10 mV H = 0, V = 0 365 nm 320 920 40 ±15 3.0 x 10-14 (Typ.) 4.2 x 10 12 (Typ.) 2 .25 -8.0 .31 .19 1100 320 920 40 ±15 5.9 x 10-15 (Typ.) 2.1 x 10 13 (Typ.) 30 Typ. 60 .12 490 -2.0 100 7.0 -8.0 .31 .19 1100 .23 Max. Min. 30 Typ. 60 .12 490 -2.0 20 .23 Max. µA %/°C mV mV/°C pA GΩ %/°C nF A/W nm nm V Degrees W ⁄ Hz cm Hz / W
VTB1113
UNITS
PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA
Phone: 314-423-4900 F...
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