VTB Process Photodiodes
VTB Process Photodiodes
VTB6061J
PACKAGE DIMENSIONS inch (mm)
PRODUCT DESCRIPTION
Large area planar silicon photodiod...
Description
VTB Process Photodiodes
VTB6061J
PACKAGE DIMENSIONS inch (mm)
PRODUCT DESCRIPTION
Large area planar silicon photodiode in a “flat” window, three lead TO-8 package. Chip is isolated from case. The third lead allows case to be grounded. These diodes have very high shunt resistance and have good blue response.
CASE 15 TO-8 HERMETIC CHIP ACTIVE AREA: .058 in2 (37.7 mm2)
ABSOLUTE MAXIMUM RATINGS
Storage Temperature: Operating Temperature: -40°C to 110°C -40°C to 110°C
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also VTB curves, pages 21-22)
VTB6061J
SYMBOL ISC TC ISC VOC TC VOC ID RSH TC RSH CJ SR λrange λp VBR θ1/2 NEP D* CHARACTERISTIC Short Circuit Current ISC Temperature Coefficient Open Circuit Voltage VOC Temperature Coefficient Dark Current Shunt Resistance RSH Temperature Coefficient Junction Capacitance Sensitivity Spectral Application Range Spectral Response - Peak Breakdown Voltage Angular Resp. - 50% Resp. Pt. Noise Equivalent Power Specific Detectivity 2 TEST CONDITIONS Min. H = 100 fc, 2850 K 2850 K H = 100 fc, 2850 K 2850 K H = 0, VR = 2.0 V H = 0, V = 10 mV H = 0, V = 10 mV H = 0, V = 0 365 nm 320 920 40 ±55 5.7 x 10-14 (Typ.) 1.1 x 10 13 (Typ.) .10 -8.0 8.0 0.1 1100 260 Typ. 350 .12 490 -2.0 2.0 .23 Max. µA %/°C mV mV/°C nA GΩ %/°C nF A/W nm nm V Degrees W ⁄ Hz cm Hz / W UNITS
PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA
Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto
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