VTB8440

VTB Process Photodiodes VTB8440, 8441 PACKAGE DIMENSIONS inch (mm) CASE 21 8 mm CERAMIC CHIP ACTIVE AREA: .008 in2 (5.16 mm2) PRODUCT DESCRIPTION Planar silicon photodiode in a recessed ceramic package. Chip is coated with a protective layer of epoxy. These diodes have very high shunt resistance and have good blue response. ABSOLUTE MAXIMUM RATINGS Storage Temperature: Operating Temperature: -20°C to 75°C -20°C to 75°C ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also VTB curves, pages 21-22) VTB8440 SYMBOL ISC TC ISC VOC TC VOC ID RSH TC RSH CJ SR λrange λp VBR θ1/2 NEP D* CHARACTERISTIC Short Circuit Current ISC Temperature Coefficient Open Circuit Voltage VOC Temperature Coefficient Dark Current Shunt Resistance RSH Temperature Coefficient Junction Capacitance Sensitivity Spectral Application Range Spectral Response - Peak Breakdown Voltage Angular Resp. - 50% Resp. Pt. Noise Equivalent Power Specific Detectivity 2 TEST CONDITIONS Min. H = 100 fc, 2850 K 2850 K H = 100 fc, 2850 K 2850 K H = 0, VR = 2.0 V H = 0, V = 10 mV H = 0, V = 10 mV H = 0, V = 0 365 nm 320 920 40 ±50 5.9 x 10-14 (Typ.) 3.9 x 10 12 (Typ.) VTB8441 UNITS Max. .23 Min. 35 Typ. 45 .12 490 -2.0 2000 100 1.4 -8.0 1.0 .10 1100 320 920 2 40 ±50 1.3 x 10 -14 (Typ.) 1.7 x 10 13 (Typ.) 1100 .23 Max. µA %/°C mV mV/°C pA GΩ %/°C nF A/W nm nm V Degrees W ⁄ Hz cm Hz / W Typ. 45 .12 490 -2.0 .07 -8.0 1.0 .10 35 PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA Phone: 314-423-4900 Fax: 314...