VTD205

Alternate Source/ Second Source Photodiodes VTD205 (SFH205 INDUSTRY EQUIVALENT) PACKAGE DIMENSIONS inch (mm) CASE 60 TO-92 TYPE (ROUND LENS) CHIP ACTIVE AREA: .011 in2 (7.41 mm2) PRODUCT DESCRIPTION Large area planar silicon photodiode in a cast epoxy sidelooker, similar in outline to the TO-92 package. The package material filters out all visible light but passes infrared. These diodes exhibit low dark current under reverse bias and fast speed of response. ABSOLUTE MAXIMUM RATINGS Storage Temperature: Operating Temperature: -40°C to 100°C -40°C to 100°C ELECTRO-OPTICAL CHARACTERISTICS @ 25°C VTD205 SYMBOL ISC TC ISC VOC TC VOC ID CJ tR/tF SR λrange λp VBR θ1/2 CHARACTERISTIC Short Circuit Current ISC Temperature Coefficient Open Circuit Voltage VOC Temperature Coefficient Dark Current Junction Capacitance Rise/Fall Time @ RL = 50Ω Sensitivity Spectral Application Range Spectral Response - Peak Breakdown Voltage Angular Resp.-50% Resp. Pt. 20 TEST CONDITIONS Min. 940 nm, H = 0.5 mW/cm2 2856 K 940 nm, H = 0.5 mW/cm2 2856 K H = 0, VR = 10 V H = 0, VR = 0 v, 1 MHz VR = 5 V, 850 nm @ Peak 800 925 50 ±60 250 15 Typ. 25 .20 350 -2.6 2 72 20 0.6 1100 30 Max. µA %/°C mV mV/°C nA pF nsec A/W nm nm V Degrees UNITS PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto 75 ...