VTE3322LA

GaAs Infrared Emitting Diodes Long T-1 Plastic Package — 940 nm VTE3322LA, 24LA PACKAGE DIMENSIONS inch (mm) DESCRIPTION CASE 50A LONG T-1 CHIP SIZE: .011" X .011" This narrow beam angle, 3 mm diameter plastic packages, GaAs, 940 nm emitter is suitable for use in optical switch applications. ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted) Maximum Temperatures Storage and Operating: Continuous Power Dissipation: Derate above 30°C: Maximum Continuous Current: Derate above 30°C: Peak Forward Current, 10 µs, 100 pps: Temp. Coefficient of Power Output (Typ.): Maximum Reverse Voltage: -40°C to 100°C 100 mW 1.43 mW/°C 50 mA 0.71 mA/°C 3A -.8%/°C 5.0V Maximum Reverse Current @ VR = 5V: Peak Wavelength (Typical): Junction Capacitance @ 0V, 1 MHz (Typ.): Response Time @ IF = 20 mA Rise:1.0 µs Fall: 1.0 µs Lead Soldering Temperature: 10 µA 940 nm 14 pF 260°C (1.6 mm from case, 5 seconds max. ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also GaAlAs curves, pages 123-124) Output Irradiance Part Number Ee mW/cm2 Min. VTE3322LA VTE3324LA 1.0 2.0 Typ. 1.3 2.6 Condition distance mm 10.16 10.16 Diameter mm 2.1 2.1 Radiant Intensity Ie mW/sr Min. 1.0 2.0 Total Power PO mW Typ. 1.5 2.5 Test Current IFT mA (Pulsed) 20 20 Forward Drop VF @ IFT Volts Typ. Typ. 1.25 1.25 Max. 1.6 1.6 ±10° ±10° Half Power Beam Angle θ1/2 Refer to General Product Notes, page 2. PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkine...