VTE3372LA

GaAlAs Infrared Emitting Diodes Long T-1 (3 mm) Plastic Package — 880 nm VTE3372LA, 74LA PACKAGE DIMENSIONS inch (mm) DESCRIPTION CASE 50A Long T-1 (3 mm) CHIP SIZE: .011" x .011" This narrow beam angle 3 mm diameter plastic packaged emitter is suitable for use in optical switch applications. It contains a small area, GaAlAs, 880 nm, high efficiency IRED die. ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted) Maximum Temperatures Storage and Operating: Continuous Power Dissipation: Derate above 30°C: Maximum Continuous Current: Derate above 30°C: Peak Forward Current, 10 µs, 100 pps: Temp. Coefficient of Power Output (Typ.): -40°C to 100°C 100 mW 1.43 mW/°C 50 mA 0.71 mA/°C 2.5 A -.8%/°C Maximum Reverse Voltage: Maximum Reverse Current @ VR = 5V: Peak Wavelength (Typical): Junction Capacitance @ 0V, 1 MHz (Typ.): Response Time @ IF = 20 mA Rise:1.0 µs Fall: 1.0 µs Lead Soldering Temperature: (1.6 mm from case, 5 seconds max.) 5.0V 10 µA 880 nm 14 pF 260°C ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also GaAlAs curves, pages 108-110) Output Irradiance Part Number Ee mW/cm2 Min. VTE3372LA VTE3374LA 2.0 4.0 Typ. 2.6 5.2 Condition distance mm 10.16 10.16 Diameter mm 2.1 2.1 Radiant Intensity Ie mW/sr Min. 2.0 4.1 Total Power PO mW Typ. 3.0 5.0 Test Current IFT mA (Pulsed) 20 20 Forward Drop VF @ IFT Volts Typ. Typ. 1.3 1.3 Max. 1.8 1.8 ±10° ±10° Half Power Beam Angle θ1/2 Refer to General Product Notes, page 2. PerkinElmer Optoelectronics, 10900 Page Ave., St. Loui...