Document
GaAlAs Infrared Emitting Diodes
Molded Lateral Package — 880 nm
VTE7172, 7173
PACKAGE DIMENSIONS inch (mm)
DESCRIPTION
CASE 7 LATERAL CHIP SIZE: .011" x .011"
These side-looking packages are designed for use in PC board mounted interrupt detectors. The package is transfer molded plastic and contains a high efficiency, 880 nm, GaAlAs IRED die.
ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted)
Maximum Temperatures Storage and Operating: Continuous Power Dissipation: Derate above 30°C: Maximum Continuous Current: Derate above 30°C: Peak Forward Current, 10 µs, 100 pps: Temp. Coefficient of Power Output (Typ.): -40°C to 85°C 100 mW 1.82 mW/°C 50 mA 0.91 mA/°C 2.5 A -.8%/°C Maximum Reverse Voltage: Maximum Reverse Current @ VR = 5V: Peak Wavelength (Typical): Junction Capacitance @ 0V, 1 MHz (Typ.): Response Time @ IF = 20 mA Rise: 1.0 µs Fall: 1.0 µs Lead Soldering Temperature: (1.6 mm from case, 5 seconds max.) 5.0V 10 µA 880 nm 14 pF
260°C
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also GaAlAs curves, pages 108-110)
Output Irradiance Part Number Ee mW/cm2 Min. VTE7172 VTE7173 0.4 0.6 Typ. 0.6 0.8 Condition distance mm 16.7 16.7 Diameter mm 4.6 4.6 Radiant Intensity Ie mW/sr Min. 1.1 1.7 Total Power PO mW Typ. 2.5 5.0 Test Current IFT mA (Pulsed) 20 20 Forward Drop VF @ IFT Volts Typ. Typ. 1.3 1.3 Max. 1.8 1.8 ±25° ±25° Half Power Beam Angle θ1/2
Refer to General Product Notes, page 2.
PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto
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