VTP Process Photodiodes
VTP Process Photodiodes
VTP7110
PACKAGE DIMENSIONS inch (mm)
PRODUCT DESCRIPTION
Small area planar silicon photodiode...
Description
VTP Process Photodiodes
VTP7110
PACKAGE DIMENSIONS inch (mm)
PRODUCT DESCRIPTION
Small area planar silicon photodiode in a clear, lensed sidelooking package. These diodes exhibit low dark current under reverse bias and fast speed of response.
CASE 7 LATERAL CHIP ACTIVE AREA: .0011 in2 (0.684 mm2)
ABSOLUTE MAXIMUM RATINGS
Storage Temperature: Operating Temperature: -40°C to 85°C -40°C to 85°C
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also VTP curves, page 46)
VTP7110
SYMBOL ISC TC ISC VOC TC VOC ID RSH CJ Re SR λrange λp VBR θ1/2 NEP D* CHARACTERISTIC Short Circuit Current ISC Temperature Coefficient Open Circuit Voltage VOC Temperature Coefficient Dark Current Shunt Resistance Junction Capacitance Responsivity Sensitivity Spectral Application Range Spectral Response - Peak Breakdown Voltage Angular Resp. - 50% Resp. Pt. Noise Equivalent Power Specific Detectivity 30 TEST CONDITIONS Min. H = 100 fc, 2850 K 2850 K H = 100 fc, 2850 K 2850 K H = 0, VR = 10 V H = 0, V = 10 mV H = 0, V = 3 V 940 nm @ Peak 400 925 140 ±58 1.9 x 10 -13 (Typ.) 5.3 x 10 11 (Typ.) .015 .55 1150 7 25 6 Typ. 9 .20 350 -2.0 35 Max. µA %/°C mV mV/°C nA GΩ pF A/(W/cm2) A/W nm nm V Degrees W ⁄ Hz cm Hz / W UNITS
PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA
Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto
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