VTS82

VTS Process Photodiodes PRODUCT DESCRIPTION This series of planar, P on N, large area silicon photodiodes is characterized for use in the photovoltaic (unbiased) mode. Their excellent speed and broadband sensitivity makes them ideal for detecting light from a variety of sources such as LEDs, IREDs, flashtubes, incandescent lamps, lasers, etc. Improved shunt resistance minimizes amplifier offset and drift in high gain systems. The solderable contact system on these photodiodes provides a cost effective design solution for many applications. ABSOLUTE MAXIMUM RATINGS Storage Temperature: -40°C to 150°C -40°C to 105°C Operating Temperature: -40°C to 125°C -40°C to 105°C Reverse Voltage: Series 20, 31 Series 30 DIMENSIONS VTS_ _80, 82, 85 PACKAGE DIMENSIONS inch (mm) CASE 44A ANODE (ACTIVE) SURFACE SHOWN CATHODE IS BACKSIDE VTS__80 .800 (20.32) .800 (20.32) .6072 (3922) VTS__82 .400 (10.16) .400 (0.16) .144 2 (932) VTS__85 .200 (5.08) .200 (5.08) .032 2 (212) Series 20, 31 Series 30 L W 6.0 Volts ACTIVE AREA ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also VTS curves, page 67) SYMBOL ISC TC ISC ID TC ID RSH CJ SR Re TC VOC tR/tF VOC TC VOC CHARACTERISTIC Short Circuit Current ISC Temperature Coefficient Dark Current ID Temp. Coefficient Shunt Resistance Junction Capacitance Sensitivity Responsivity Sensitivity @ Peak Response Time @ 1 kΩ Load Open Circuit Voltage VOC Temperature Coefficient TEST CONDITIONS Min. VTS__80 Typ. Max. Min. VTS__82 Typ. Max. Min. VTS__85 Typ. ...