VTT1016

.050" NPN Phototransistors TO-46 Flat Window Package VTT1015, 16, 17 PACKAGE DIMENSIONS inch (mm) CASE 1 TO-46 (FLAT WINDOW) CHIP TYPE: 50T PRODUCT DESCRIPTION A large area high sensitivity NPN silicon phototransistor in a flat lensed, hermetically sealed, TO-46 package. The hermetic package offers superior protection from hostile environments. The base connection is brought out allowing conventional transistor biasing. These devices are spectrally matched to the VTE10xx series of IREDs. ABSOLUTE MAXIMUM RATINGS (@ 25°C unless otherwise noted) Maximum Temperatures Storage Temperature: Operating Temperature: Continuous Power Dissipation: Derate above 30°C: Maximum Current: Lead Soldering Temperature: (1.6 mm from case, 5 sec. max.) -40°C to 110°C -40°C to 110°C 250 mW 3.12 mW/°C 200 mA 260°C ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also typical curves, pages 91-92) Light Current lC mA Min. VTT1015 VTT1016 VTT1017 0.4 1.0 2.5 Max. — — — H fc (mW/cm2) VCE = 5.0 V 100 (5) 100 (5) 100 (5) Dark Current lCEO H=0 (nA) Max. 25 25 25 VCE (Volts) 20 20 10 Collector Breakdown VBR(CEO) lC = 100 µA H=0 Volts, Min. 40 30 20 Emitter Breakdown VBR(ECO) lE = 100 µA H=0 Volts, Min. 6.0 6.0 4.0 Saturation Voltage VCE(SAT) lC = 1.0 mA H = 400 fc Volts, Max. 0.40 0.40 0.40 Rise/Fall Time tR/tF lC = 1.0 mA RL = 100 Ω µsec, Typ. 5.0 5.0 8.0 Typ. ±35° ±35° ±35° Angular Response θ1/2 Part Number Refer to General Product Notes, page 2. PerkinElmer Optoelectronics, 10900 Page Ave., St. Lo...