W08 Datasheet: SILICON BRIDGE RECTIFIERS





W08 SILICON BRIDGE RECTIFIERS Datasheet

Part Number W08
Description SILICON BRIDGE RECTIFIERS
Manufacture EIC discrete Semiconductors
Total Page 2 Pages
PDF Download Download W08 Datasheet PDF

Features: W005 - W10 PRV : 50 - 1000 Volts Io : 1. 5 Ampere FEATURES : * * * * * * * Glass passivated chip High case dielectric s trength High surge current capability H igh reliability Low reverse current Low forward voltage drop Ideal for printed circuit board SILICON BRIDGE RECTIFIE RS WOB 0.39 (10.0) 0.31 (7.87) 0.22 (5. 59) 0.18 (4.57) + AC 1.00 (25.4) MIN . 1.10 (27.9) MIN. 0.034 (0.86) 0.028 (0.71) MECHANICAL DATA : * Case : Rel iable low cost construction utilizing m olded plastic technique * Epoxy : UL94V -O rate flame retardant * Terminals : P lated leads solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Pol arity symbols marked on case * Mounting position : Any * Weight : 1.29 grams R ating at 25 °C ambient temperature unl ess otherwise specified. Single phase, half wave, 60 Hz, resistive or inductiv e load. For capacitive load, derate cur rent by 20%. AC + AC 0.22 (5.59) 0.1 8 (4.57) 0.22 (5.59) 0.18 (4.57) Dime nsion in inches and (millimeter) MAXIMUM RATINGS AND ELECTRICAL.

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W005 - W10
SILICON BRIDGE RECTIFIERS
PRV : 50 - 1000 Volts
Io : 1.5 Ampere
FEATURES :
* High case dielectric strength
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Ideal for printed circuit board
* Pb / RoHS Free
MECHANICAL DATA :
* Case : Reliable low cost construction
utilizing molded plastic technique
* Epoxy : UL94V-O rate flame retardant
* Terminals : Plated leads solderable per
MIL-STD-202, Method 208 guaranteed
* Polarity : Polarity symbols marked on case
* Mounting position : Any
* Weight : 1.29 grams
0.22 (5.59)
0.18 (4.57)
WOB
0.39 (10.0)
0.31 (7.87)
+ AC -
1.00 (25.4)
MIN.
0.034 (0.86)
0.028 (0.71)
AC -
+ AC
0.22 (5.59)
0.18 (4.57)
0.22 (5.59)
0.18 (4.57)
Dimension in inches and (millimeter)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current
0.375" (9.5 mm) lead length
Peak Forward Surge Current Single half sine wave
Superimposed on rated load (JEDEC Method)
Rating for fusing ( t < 8.3 ms. )
Maximum Forward Voltage per Diode at IF = 1.0 A
Maximum DC Reverse Current
Ta = 25 °C
at Rated DC Blocking Voltage
Ta = 100 °C
Typical Junction Capacitance per Diode (Note 1)
Typical Thermal Resistance (Note 2)
Operating Junction Temperature Range
Storage Temperature Range
SYMBOL W005
VRRM
VRMS
VDC
50
35
50
W01
100
70
100
W02
200
140
200
W04
400
280
400
W06
600
420
600
W08
800
560
800
W10 UNIT
1000
700
1000
V
V
V
IF(AV) 1.5 A
IFSM
I2t
VF
IR
IR(H)
CJ
RθJA
TJ
TSTG
50
10
1.0
10
1.0
14
36
- 50 to + 150
- 50 to + 150
A
A2S
V
µA
mA
pf
°C/W
°C
°C
Notes :
1 ) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts.
2 ) Thermal resistance from Junction to Ambient at 0.375" (9.5 mm) lead length P.C. Board mounting.
Page 1 of 2
Rev. 02 : March 25, 2005

     






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