W27E512

W27E512 64K × 8 ELECTRICALLY ERASABLE EPROM GENERAL DESCRIPTION The W27E512 is a high speed, low power Electrically Erasable and Programmable Read Only Memory organized as 65536 × 8 bits that operates on a single 5 volt power supply. The W27E512 provides an electrical chip erase function. FEATURES High speed access time: 45/55/70/90/120/150 nS (max.) Read operating current: 30 mA (max.) Erase/Programming operating current 30 mA (max.) Standby current: 1 mA (max.) Single 5V power supply +14V erase/+12V programming voltage Fully static operation All inputs and outputs directly TTL/CMOS compatible Three-state outputs Available packages: 28-pin 600 mil DIP, 330 mil SOP, TSOP and 32-pin PLCC PIN CONFIGURATIONS BLOCK DIAGRAM A15 A12 A7 A6 A5 A4 A3 A2 A1 A0 Q0 Q1 Q2 GND 1 28 2 27 3 26 4 25 5 24 6 28-pin 23 7 DIP 22 8 21 9 20 10 19 11 18 12 17 13 16 14 15 VCC A14 A13 A8 A9 A11 OE/Vpp A10 CE Q7 Q6 Q5 Q4 Q3 AA VAA A1 1NC1 1 7 2 5CC4 3 432 1 3 3 3 A6 5 2 1 0 29 A8 A5 6 28 A9 A4 7 A3 8 A2 9 32-pin PLCC 27 A11 26 NC 25 OE/Vpp A1 10 A0 11 24 A10 23 CE NC Q0 12 1 13 4 1 5 1 6 11 78 1 9 2 22 0 21 Q7 Q6 OE/Vpp A11 A9 A8 A13 A14 VCC A15 A12 A7 A6 A5 A4 A3 Q QGN QQQ 1 2NC 3 4 5 D 1 28 2 27 3 26 4 25 5 24 6 23 7 28-pin 22 8 TSOP 21 9 20 10 19 11 18 12 17 13 16 14 15 A10 CE Q7 Q6 Q5 Q4 Q3 GND Q2 Q1 Q0 A0 A1 A2 CE OE/VPP CONTROL OUTPUT BUFFER Q0 . . Q7 A0 . DECODER . A15 VCC GND CORE ARRAY PIN DESCRIPTION SYMBOL A0−A15 Q...