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W29EE512

Winbond

64K x 8 CMOS FLASH MEMORY

W29EE512 64K × 8 CMOS FLASH MEMORY GENERAL DESCRIPTION The W29EE512 is a 512K bit, 5-volt only CMOS flash memory organi...


Winbond

W29EE512

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Description
W29EE512 64K × 8 CMOS FLASH MEMORY GENERAL DESCRIPTION The W29EE512 is a 512K bit, 5-volt only CMOS flash memory organized as 64K × 8 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is not required. The unique cell architecture of the W29EE512 results in fast program/erase operations with extremely low current consumption (compared to other comparable 5-volt flash memory products). The device can also be programmed and erased using standard EPROM programmers. FEATURES Single 5-volt program and erase operations Fast page-write operations − 128 bytes per page − Page program cycle: 10 mS (max.) − Effective byte-program cycle time: 39 µS − Optional software-protected data write Fast chip-erase operation: 50 mS Read access time: 70/90/120 nS Typical page program/erase cycles: 1K/10K Ten-year data retention Software and hardware data protection Low power consumption − Active current: 50 mA ...




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