512K 4 BANKS 32 BITS SDRAM
PRELIMINARY W986432DH 512K × 4 BANKS × 32 BITS SDRAM
GENERAL DESCRIPTION
W986432DH is a high-speed synchronous dynamic r...
Description
PRELIMINARY W986432DH 512K × 4 BANKS × 32 BITS SDRAM
GENERAL DESCRIPTION
W986432DH is a high-speed synchronous dynamic random access memory (SDRAM), organized as 512K words × 4 banks × 32 bits. Using pipelined architecture and 0.175 µm process technology, W986432DH delivers a data bandwidth of up to 800M bytes per second (5). For different application, W986432DH is sorted into four speed grades: -5, -55, -6, -7,-8. Accesses to the SDRAM are burst oriented. Consecutive memory location in one page can be accessed at a burst length of 1, 2, 4, 8 or full page when a bank and row is selected by an ACTIVE command. Column addresses are automatically generated by the SDRAM internal counter in burst operation. Random column read is also possible by providing its address at each clock cycle. The multiple bank nature enables interleaving among internal banks to hide the precharging time. By having a programmable Mode Register, the system can change burst length, latency cycle, interleave or sequential burst to maximize its performance. W986432DH is ideal for main memory in high performance applications.
FEATURES
3.3V ±0.3V power supply 524288 words × 4 banks × 32 bits organization Auto Refresh and Self Refresh CAS latency: 2 and 3 Burst Length: 1, 2, 4, 8, and full page Sequential and Interleave burst Burst read, single write operation Byte data controlled by DQM Power-down Mode Auto-precharge and controlled precharge 4K refresh cycles/64 mS Interface: LVTTL ...
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