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WEDPNF8M721V-1012BC Dataheets PDF



Part Number WEDPNF8M721V-1012BC
Manufacturers ETC
Logo ETC
Description 8Mx72 Synchronous DRAM + 8Mb Flash Mixed Module Multi-Chip Package
Datasheet WEDPNF8M721V-1012BC DatasheetWEDPNF8M721V-1012BC Datasheet (PDF)

White Electronic Designs WEDPNF8M721V-XBX 8Mx72 Synchronous DRAM + 8Mb Flash Mixed Module Multi-Chip Package ADVANCED* FEATURES n n n Package: • 275 Plastic Ball Grid Array (PBGA), 32mm x 25mm Commercial, Industrial and Military Temperature Ranges Weight: • WEDPNF8M721V-XBX - 2.5 grams typical n n n n Sector Architecture • One 16KByte, two 8KBytes, one 32KByte, and fif teen 64KBytes in byte mode • One 8K word, two 4K words, one 16K word, and fifteen 32K word sectors in word mode. • Any combina.

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White Electronic Designs WEDPNF8M721V-XBX 8Mx72 Synchronous DRAM + 8Mb Flash Mixed Module Multi-Chip Package ADVANCED* FEATURES n n n Package: • 275 Plastic Ball Grid Array (PBGA), 32mm x 25mm Commercial, Industrial and Military Temperature Ranges Weight: • WEDPNF8M721V-XBX - 2.5 grams typical n n n n Sector Architecture • One 16KByte, two 8KBytes, one 32KByte, and fif teen 64KBytes in byte mode • One 8K word, two 4K words, one 16K word, and fifteen 32K word sectors in word mode. • Any combination of sectors can be concurrently erased. Also supports full chip erase Boot Code Sector Architecture (Bottom) Embedded Erase and Program Algorithms Erase Suspend/Resume • Supports reading data from or programing data to a sector not being erased SDRAM PERFORMANCE FEATURES n n n n n n n n Organized as 8M x 72 High Frequency = 100, 125MHz Single 3.3V ±0.3V power supply Fully Synchronous; all signals registered on positive edge of system clock cycle Internal pipelined operation; column address can be changed every clock cycle Internal banks for hiding row access/precharge Programmable Burst length 1,2,4,8 or full page 4096 refresh cycles BENEFITS n n n n n n 42% SPACE SAVINGS Reduced part count Reduced I/O count • 14% I/O Reduction Suitable for hi-reliability applications SDRAM Upgradeable to 16M x 72 density (contact factory for information) Flash upgradeable to 2M x 8 (or 1M x 16 or 512K x 32) density FLASH PERFORMANCE FEATURES n n n n User Configurable as 1Mx8 or 512Kx16 Access Times of 100, 120, 150ns 3.3 Volt for Read and Write Operations 1,000,000 Erase/Program Cycles * This data sheet describes a product that may or may not be under development and is subject to change or cancellation without notice. September 2002 Rev. 3 1 White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com White Electronic Designs FIG. 1 PIN CONFIGURATION TOP VIEW WEDPNF8M721V-XBX NOTES: 1. DNU = Do Not Use 2. FD16-31, BYTE2, RY/BY2 are NC in this part, and used for flash upgraded to WEDPN8M722V-XBX (2x8M Flash). White Electronic Designs Corporation • Phoenix AZ • (602) 437-1520 2 White Electronic Designs FIG. 2 FUNCTIONAL BLOCK DIAGRAMS WEDPNF8M721V-XBX SDRAM FLASH 3 White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com White Electronic Designs PACKAGE PINOUT LISTING Signal Name V CC GND FD0 - 15 RYBY1 RST BYTE1 FD16* - 31* RYBY2* BYTE2* FA1-19 FCS1 FCS2* FWE FOE A0 - A11 BA0 - 1 CS0 WE0 CLK0 CKE0 RAS0 CAS0 DQML0 DQMH0 CS1 WE1 CLK1 CKE1 RAS1 CAS1 DQML1 DQMH1 CS2 WE2 CLK2 CKE2 RAS2 CAS2 DQML2 DQMH2 CS3 WE3 CLK3 CKE3 RAS3 Pin Number WEDPNF8M721V-XBX D15, E15, F8, F10, F15, G4, H4, J14, J15, J16, J17, K2, K3, K4, K5, L14, L15, L16, M5, M14, M15, N4, N5, N7, N8, N14, P4, P5, P6, P7, P11, P12, P13, P14, R4, T15, U15, V15 D4, D16, E4, F4, F7, F9, F11, F12, F13, G14, G15, H15, J2, J3, J4, J5, K14, K15, K16, K17, L4, L5, M4, N6, N9, N10, N11, N12, N13, N15, P8, P9, P10, P15, R15, T4, U4, V4 E8, C8, E9, C9, C10, D11, C11, D12, D.


WEDPNF8M721V-1010BM WEDPNF8M721V-1012BC WEDPNF8M721V-1012BI


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