NPN EPITAXIAL SILICON TRANSISTORS
High Voltage Transistor Die Size 0.6*0.6mm Power Dissipation: 225mW Collector Current:...
NPN EPITAXIAL SILICON
TRANSISTORS
High Voltage
Transistor Die Size 0.6*0.6mm Power Dissipation: 225mW Collector Current: Max. 500mA Bonding Pad Size Emitoe 100*100mkm Base 100*100mkm
WMBTA42
SOT— —23
*
*
* *
1. BASE
2. EMITTER
3. COLLECTOR
GUARANTEED PROBED CHARACTERISTICS (TA=25℃) Characteristic Collector-emitter Breakdown Voltage Collector-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Transition Frequency Collector-Base Capacitance Symbol VCEO VCBO ICBO IEBO hFE Test Conditions IC=1.0mA IC=100uA VCB=260V VEB=6V VCE=10V, IC=1mA VCE=10V, IC=10mA VCE=10V, IC=30mA IC=20mA, Ib=2mA IC=20mA, IB=2mA VCE=20V, IC=10mA,f=10MHz VCB=20V, f=1MHz Limits Min Typ Max 300 Units V
300
30 40 40 50 -
-
100 100 -
V
nA nA
-
VBEsat VCEsat fr Ccb
-
0.90
V V MHz pF
0.35 3.0
NOTES: Due to probe testing limitations, only the DC parameters are tested.
Wing Shing Computer Components Co., (H.K.)Ltd. Homepage: http://www.wingshing.com
Tel:(852)2341 9276 Fax:(852)2797 8153 E-mail:
[email protected]
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