WS27C010L-17CMB

WS27C010L Military 128K x 8 CMOS EPROM KEY FEATURES High Performance CMOS — 90 ns Access Time DESC SMD No. 5962-89614 Compatible with JEDEC 27010 and 27C010 EPROMs Fast Programming EPI Processing — Latch-Up Immunity to 200 mA — ESD Protection Exceeds 2000 Volts JEDEC Standard Pin Configuration — 32 Pin CERDIP Package — 32 Pin Leadless Chip Carrier (CLLCC) GENERAL DESCRIPTION The WS27C010L is a performance oriented 1 Meg UV Erasable Electrically Programmable Read Only Memory organized as 128K words x 8 bits/word. It is manufactured using an advanced CMOS technology which enables it to operate at data access times as fast as 120 nsecs. The memory was designed utilizing WSI's patented self-aligned split gate EPROM cell, resulting in a low power device with a very cost effective die size. The WS27C010L 1 Meg EPROM provides extensive code store capacity for microprocessor, DSP, and microcontroller-based systems. Its 120 nsec access time over the full Military temperature range provides the potential of no-wait state operation. And where this parameter is important, the WS27C010L provides the user with a very fast 35 nsec TOE output enable time. The WS27C010L is offered in both a 32 pin 600 mil CERDIP, and a 32 pad Ceramic Leadless Chip Carrier (CLLCC) for surface mount applications. Its standard JEDEC EPROM pinouts provide for automatic upgrade density paths for existing 128K and 256K EPROM users. PIN CONFIGURATION TOP VIEW Chip Carrier A12 A15 A16 VPP VCC PGM NC...