WS27C256L-20DMB

WS27C256L Military 32K x 8 CMOS EPROM KEY FEATURES High Performance CMOS — 120 ns Access Time Ceramic Leadless Chip Carrier (CLLCC) EPI Processing — Latch-Up Immunity to 200 mA — ESD Protection Exceeds 2000 Volts Fast Programming DESC SMD No. 5962-86063 300 Mil DIP or Standard 600 Mil DIP JEDEC Standard Pin Configuration GENERAL DESCRIPTION The WS27C256L is a performance oriented 256K UV Erasable Electrically Programmable Read Only Memory organized as 32K words x 8 bits/word. It is manufactured using an advanced CMOS technology which enables it to operate at speeds up to 120 nsecs. The memory was designed utilizing WSI's patented self-aligned split gate EPROM cell, resulting in a low power device with a very cost effective die size. The WS27C256L 256K EPROM provides 32K of 8 bit wide code store capacity for DSP, microprocessor, and microcontroller-based systems. Its 120 nsec access time over the full Military temperature range provides the potential of no-wait state operation. And where this parameter is important, the WS27C256L provides the user with a very fast 35 nsec TOE output enable time. The WS27C256L is offered in a 28 pin 300 mil skinny CERDIP or the standard 600 mil CERDIP, and also in a 32 pad Ceramic Leadless Chip Carrier (CLLCC) for surface mount applications. All packages incorporate the standard JEDEC EPROM pinout. PIN CONFIGURATION TOP VIEW Chip Carrier A7 A12 VPP NC VCC A14 A13 CERDIP A6 A5 A4 A3 A2 A1 A0 NC O0 4 3 2 32 31 30 1 5 29 6 ...