ZMV930

ZC930, ZMV930, ZV931 series SILICON 12V HYPERABRUPT VARACTOR DIODES Device Description A range of silicon varactor diodes for use in frequency control and filtering. Featuring closely controlled CV characteristics and high Q. Low reverse current ensures very low phase noise performance. Available in single or dual common cathode format in a wide rage of miniature surface mount packages. Features · Close tolerance C-V characteristics · Octave tuning from 0 to 6V · Low IR (typically 200pA) · Excellent phase noise performance · High Q · Range of miniature surface mount packages Applications · VCXO and TCXO · Wireless communications · Pagers · Mobile radio ISSUE 6 - JANUARY 2002 1 ZC930, ZMV930, ZV931 series TUNING CHARACTERISTICS at Tamb = 25°C PART Capacitance V R =1V MIN pF 930 931 932 933 933A 934 934A 8.70 13.50 17.00 42.00 42.00 95.00 95.00 MIN pF 4.30 6.50 8.50 18.00 20.25 40.00 47.25 Capacitance V R =2.5V MAX pF 5.50 7.80 10.50 27.00 24.75 65.00 57.75 Capacitance V R =4V MAX pF 2.90 4.00 5.50 12.00 12.00 25.00 25.00 200 300 200 150 150 80 80 Minimum Q V R =4V f=50MHz ABSOLUTE MAXIMUM RATINGS PARAMETER Reverse voltage Forward current Power dissipation at T amb = 25 Њ C SOT23 Power dissipation at T amb = 25 Њ C SOD323 Power dissipation at T amb = 25 Њ C SOD523 Operating and storage temperature range SYMBOL VR IF P tot P tot P tot MAX 12 100 330 330 250 -55 to +150 UNIT V mA mW mW mW ЊC ELECTRICAL CHARACTERISTICS at Tamb = 25°C PARAMETER Reverse breakdown voltage Reve...