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ZNGB6000 Dataheets PDF



Part Number ZNGB6000
Manufacturers Zetex Semiconductors
Logo Zetex Semiconductors
Description FET BIAS CONTROLLER
Datasheet ZNGB6000 DatasheetZNGB6000 Datasheet (PDF)

FET BIAS CONTROLLER ISSUE 2 - JUNE 1998 DEVICE DESCRIPTION The ZNBG series of devices are designed to meet the bias requirements of GaAs and HEMT FETs commonly used in satellite receiver LNBs, PMR, cellular telephones etc. with a minimum of external components. With the addition of two capacitors and resistors the devices provide drain voltage and current control for a number of external grounded source FETs, generating the regulated negative rail required for FET gate biasing whilst operating f.

  ZNGB6000   ZNGB6000


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FET BIAS CONTROLLER ISSUE 2 - JUNE 1998 DEVICE DESCRIPTION The ZNBG series of devices are designed to meet the bias requirements of GaAs and HEMT FETs commonly used in satellite receiver LNBs, PMR, cellular telephones etc. with a minimum of external components. With the addition of two capacitors and resistors the devices provide drain voltage and current control for a number of external grounded source FETs, generating the regulated negative rail required for FET gate biasing whilst operating from a single supply. This negative bias, at -3 volts, can also be used to supply other external circuits. The ZNBG4000/1 and ZNBG6000/1 contain four and six bias stages respectively. In setting drain current the ZNBG4000/1 two resistors allows individual FET pair control to different levels, the ZNBG6000/1 two resistors split control between two and four FETs. This allows the operating current of input FETs to be adjusted to minimise noise, whilst the following FET stages can separately be adjusted for maximum gain. The series also offers the choice of drain v ol t a ge t o b e s e t f or t he F E T s , the ZNBG4000/6000 gives 2.2 volts drain whilst the ZNBG4001/6001 gives 2 volts. ZNBG4000 ZNBG4001 ZNBG6000 ZNBG6001 These devices are unconditionally stable over the full working temperature with the FETs in place, subject to the inclusion of the recommended gate and drain capacitors. These ensure RF stability and minimal injected noise. It is possible to use less than the devices full complement of FET bias controls, unused drain and gate connections can be left open circuit without affecting operation of the remaining bias circuits. In order to protect the external FETs the circuits have been designed to ensure that, under any conditions including power up/down transients, the gate drive from the bias circuits cannot exceed the range -3.5V to 0.7V. Furthermore if the negative rail experiences a fault condition, such as overload or short circuit, the drain supply to the FETs will shut down avoiding excessive current flow. The ZNBG4000/1 and ZNBG6000/1 are available in QSOP16 and 20 pin packages respectively for the minimum in devices size. Device operating temperature is -40 to 70°C to suit a wide range of environmental conditions. FEATURES APPLICATIONS • • • • • • • • Provides bias for GaAs and HEMT FETs Drives up to four or six FETs Dynamic FET protection Drain current set by external resistor Regulated negative rail generator requires only 2 external capacitors Choice in drain voltage Wide supply voltage range QSOP surface mount package • • • Satellite receiver LNBs Private mobile radio (PMR) Cellular telephones 4-137 ZNBG4000 ZNBG4001 ZNBG6000 ZNBG6001 ABSOLUTE MAXIMUM RATINGS Supply Voltage Supply Current Drain Current (per FET) (set by RCAL1 and RCAL2) Output Current Operating Temperature Storage Temperature -0.6V to 15V 100mA 0 to 15mA 100mA -40 to 70°C -50 to 85°C Power Dissipation (Tamb= 25°C) QSOP16 500mW QSOP20 650mW ELECTRICAL CHARACTERISTICS TEST CONDITIONS (Unless otherwise stated): Tamb= 25°C,VCC=5V,ID=10mA (RCAL1 =33kΩ;RCAL2 =33kΩ) SYMBOL PARAMETER CONDITIONS Min VCC ICC ICC VSUB Supply Voltage Supply Current ZNBG4000/1 Supply Current ZNBG6000/1 Substrate Voltage (Internally generated) Output Noise Drain Voltage Gate Voltage Oscillator Freq. Current Current Change ∆IDV ∆IDT VD with VCC with Tj Voltage ZNBG4000, ZNGB6000 ZNBG4001, ZNBG6001 Voltage Change ∆VDV ∆VDT with VCC with Tj VCC= 5 to 12V Tj = -40 to +70°C 0.5 50 %/V ppm VCC=5 to 12V Tj=-40 to +70°C 2 1.8 0.02 0.05 2.2 2 2.4 2.2 %/V %/°C V V ID1 to ID4=0 ID1 to ID4=10mA ID1 to ID6=0 ID1 to ID6=10mA ISUB= 0 ISUB= -200µA CG=4.7nF, CD=10nF CG=4.7nF, CD=10nF 200 8 350 10 -3.5 -3 5 LIMITS Typ Max 12 10 50 15 75 -2 -2 0.02 0.005 800 12 V mA mA mA mA V V Vpkpk Vpkpk kHz mA UNITS END ENG fO ID DRAIN CHARACTERISTICS 4-138 ZNBG4000 ZNBG4001 ZNBG6000 ZNBG6001 SYMBOL PARAMETER CONDITIONS Min LIMITS Typ Max 2000 µA UNITS GATE CHARACTERISTICS IGO Output Current Range Output Voltage ZNBG4000/1 VOL Output Low ID1 to ID4=12mA IG1 to IG4=0 ID1 to ID4=12mA IG1 to IG4= -10µA VOH Output High Output Voltage ZNBG6000/1 VOL Output Low ID1 to ID6=12mA IG1 to IG6= 0 ID1 to ID6=12mA IG1 to IG6= -10µA VOH Notes: 1. The negative bias voltages specified are generated on-chip using an internal oscillator. Two external capacitors, CNB and CSUB, of 47nF are required for this purpose. 2. The characteristics are measured using two external reference resistors RCAL1 and RCAL2 of value 33kΩ wired from pins RCAL1/2 to ground. For the ZNBG4000, resistor RCAL1 sets the drain current of FETs 1 and 2, resistor RCAL2 sets the drain current of FETs 3 and 4. For the ZNBG6000, resistor RCAL1 sets the drain current of FETs 1 and 4, resistor RCAL2 sets the drain current of FETs 2, 3, 5 and 6. -30 -3.5 -3.5 0 -2 -2 1 V V V ID1 to ID4= 8mA IG1 to IG4= 0 -3.5 -3.5 0 -2 -2 1 V V V Output High ID1 to ID6= 8mA IG1 to IG6= 0 3. Noise voltage is not measured in production. 4.


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