SILICON POWER ZENER DIODE
ZPU100 - ZPU180
SILICON POWER ZENER DIODE Features
· · · · Planar Die Construction 1.3W Power Dissipation Zener Voltages...
Description
ZPU100 - ZPU180
SILICON POWER ZENER DIODE Features
· · · · Planar Die Construction 1.3W Power Dissipation Zener Voltages Available from 100V - 180V Hermetic Glass Package for High Reliability
A
B
A
Mechanical Data
· · · · · Case: DO-41, Glass Leads: Solderable per MIL-STD-202, Method 208 Polarity: Color Band Denotes Cathode Weight: 0.3 grams (approx) Mounting Position: Any
DO-41 Dim A B C D Min 25.4 4.1 0.71 2.0
D
C
Max — 5.2 0.86 2.7
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristics Zener Current see Table below Maximum Power Dissipation (Note 1) Maximum Thermal Resistance Junction to Ambient Air (Note 1) Storage and Operating Temperature Range
@ TA = 25°C unless otherwise specified
Symbol — Pd RqJA Tj, TSTG
Value — 1.3 130 –55 to +200
Unit — W °C/W °C
Electrical Characteristics
Type Zener Voltage Range (Note 2) VZ @ IZT Volts ZPU100 ZPU120 ZPU150 ZPU180 88-110 107-134 130-165 160-200
@ TA= 25°C unless otherwise specified Test Current IZT mA 5 5 5 5 Maximum Dynamic Impedance ZZT @ IZT Ohms 300 330 360 380 Typ. Temperature Coefficient @ IZT %/°C +.110 +.110 +.110 +.110 Minimum Reverse Voltage VR @ IR = 0.5 µA Volts 75 90 112 134 Maximum Zener Current (Note 1) IZM mA 11.8 9.7 7.87 6.5
Notes:
1. Valid provided that leads are kept at ambient temperature at a distance of 10mm from case. 2. Tested with pulses tp = 20 ms.
DS21405...
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