ZT91
MECHANICAL DATA Dimensions in mm (inches)
8 .8 9 (0 .3 5 ) 9 .4 0 (0 .3 7 )
MEDIUM POWER SILICON NPN PLANAR TRANSISTOR
7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3 5 )
6 .1 0 (0 .2 4 0 ) 6 .6 0 (0 .2 6 0 )
General purpose NPN Transistor in a hermetic TO39 package.
0 .8 9 m a x . (0 .0 3 5 ) 7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3 5 ) d ia .
1 2 .7 0 (0 .5 0 0 ) m in .
5 .0 8 (0 .2 0 0 ) ty p .
0 .6 6 (0 .0 2 6 ) 1 .1 4 (0 .0 4 5 ) 0 .7 1 (0 .0 2 8 ) 0 .8 6 (0 .0 3 4 )
!
2 .5 4 (0 .1 0 0 )
VCEO = 100V IC = 1A PT = 5W
4 5 °
TO39 PACKAGE
Underside View Pin 1 = Emitter Pin 2 = Base Pin 3 = Collector
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VCBO VCEO VEBO VCER IC PTOT Collector – Base Voltage Collector – Emitter Voltage Emitter – Base Voltage Collector – Emitter Sustaining Voltage Collector Current Dissipation @ Tamb = 25°C @ Case Temp. = 100°C @ Case Temp. = 25°C Derating linearly Storage and Operatuing Junction Temperature 120V 100V 6V 100V 1A 1W 2.9W 5W 175°C –65 to 175°C
Tstg,Tj
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail:
[email protected] Website: http://www.semelab.co.uk
Prelim.3/00
ZT91
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Parameter
VCEO(SUS) Collector – Emitter Sustaining Voltage VCE(sat) VBE(sat) ICBO IEBO hFE fT NF Cob Cib Collector – Emitter Saturation Voltage Base – Emitter Saturation Voltage Collector Cut-off Current Emitter - Base Reverse Current DC Current Gain Gain Bandwidth Product Noise Figure Output Capacitance Input Capacitance
Test Conditions
IC = 10mA IC = 200mA IC = 200mA VCB=VCE VEB = 5V VCE = 10V VCE = 10V VCE = 10V VCE = 10V VCB = 10V VEB = 1V IB = 0 IB = 20mA IB = 20mA IE = 0 Tamb = 100°C IC = 0 IC = 10mA IC = 200mA IC = 50mA f = 10MHz IC = 300mA f = 1KHz f=0 f=0
Min.
100
Typ.
Max. Unit
1.2 1.5 1 60 0.1 V — MHz dB 25 100 pF V
30 40 60 250 6 120
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail:
[email protected] Website: http://www.semelab.co.uk
Prelim.3/00
.