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ZTE2.4

General Semiconductor

Voltage Stabilizers

ZTE1.5 thru ZTE2.4 Voltage Stabilizers DO-204AH (DO-35 Glass) Features • Silicon Stabilizer Diodes • Monolithic integra...


General Semiconductor

ZTE2.4

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ZTE1.5 thru ZTE2.4 Voltage Stabilizers DO-204AH (DO-35 Glass) Features Silicon Stabilizer Diodes Monolithic integrated analog circuits designed for small power stabilizer and limitation circuits, providing low dynamic resistance and high-quality stabilization performance as well as low noise. In the reverse direction, these devices show the behavior of forward-biased silicon diodes. The end of the ZTE device marked with the cathode ring is to be connected: ZTE1.5 and ZTE2 to the negative pole of the supply voltage; ZTE2.4 to the positive pole of the supply voltage These diodes are also available in MiniMELF case with the type designation LL1.5 … LL 2.4. min. 1.083 (27.5) max. .150 (3.8) max. ∅.079 (2.0) Cathode Mark min. 1.083 (27.5) Mechanical Data max. ∅.020 (0.52) Dimensions are in inches and (millimeters) Case: DO-35 Glass Case Weight: approx. 0.13g Packaging codes/options: D7/10K per 13” reel (52mm tape), 20K/box D8/10K per Ammo tape, (52mm tape), 20K/box Maximum Ratings Parameter (TA = 25°C unless otherwise noted) Symbol Value Unit Operating Current (see Table “Characteristics”) Inverse Current Power dissipation at Tamb = 25°C Junction temperature Storage temperature range IF Ptot TJ TS 100 300(1) 150 – 55 to +150 mA mW °C °C Electrical and Thermal Characteristics Parameter Forward Voltage at IF = 10 mA Temperature Coefficient of the stabilized voltage at IZ = 5 mA Thermal resistance junction to ambient air ZTE1.5, ZTE2 ZTE2.4 (TA = 25°C unless o...




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