ZTX1047A

NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ISSUE 3 – JANUARY 1995 FEATURES * Very Low Saturation Voltage * High Gain * 4 Amp Continuous Current APPLICATIONS * DC-DC Convertors * Power Management - Supply Switching ZTX1047A C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Base Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC IB Ptot Tj:Tstg ZTX1047A 35 10 5 20 4 500 1 -55 to +200 UNIT V V V A A mA W °C ZTX1047A ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector Emitter Cut-Off Current SYMBOL V(BR)CBO VCES VCEO VCEV V(BR)EBO ICBO IEBO ICES MIN. 35 35 10 35 5 TYP. 55 55 14 55 8.7 0.3 0.3 0.3 23 44 120 130 860 810 280 300 240 150 60 440 450 380 230 110 150 85 130 180 110 10 10 10 40 70 185 190 950 900 MAX. UNIT V V V V V nA nA nA mV mV mV mV mV mV CONDITIONS. IC=100µA IC=100µA IC=10mA IC=100µA, VEB=1V IE=100µA VCB=20V VEB=4V VCES=20V IC=0.5A, IB=10mA* IC=1A, IB=10mA* IC=3A, IB=10mA* IC=4A, IB=20mA* IC=4A, IB=20mA* IC=4A, VCE=2V* IC=10mA, VCE=2V* IC=1A, VCE=2V* IC=4A, VCE=2V* IC=10A, VCE=2V* IC=20A, VCE=2V* MHz pF ns ns ...