ZTX1056A

NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ISSUE 3 – JANUARY 1995 FEATURES * VCEO=160V * 3 Amp Continuous Current * 6 Amp Pulse Current * Low Saturation Voltage ZTX1056A C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Base Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC IB Ptot Tj:Tstg VALUE 200 160 5 6 3 500 1 -55 to +200 UNIT V V V A A mA W °C ZTX1056A ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage SYMBOL V(BR)CBO VCES VCEO VCEV MIN. 200 200 160 200 5 TYP. 310 310 190 310 8.8 0.3 0.3 0.3 25 95 175 220 950 860 275 300 250 60 30 420 450 400 120 50 15 120 14 110 2450 25 10 10 10 60 140 250 300 1050 950 MAX. UNIT V V V V V nA nA nA mV mV mV mV mV mV CONDITIONS. IC=100µA IC=100µA IC=10mA IC=100µA, VEB=1V IE=100µA VCB=150V VEB=4V VCES=150V IC=0.1A, IB=5mA* IC=1A, IB=50mA* IC=2A, IB=100mA* IC=3A, IB=200mA* IC=3A, IB=200mA* IC=3A, VCE=10V* IC=10mA, VCE=10V* IC=0.5A, VCE=10V* IC=1A, VCE=10V* IC=2A, VCE=10V* IC=3A, VCE=10V* IC=6A, VCE=10V* MHz pF ns ns IC=50mA, VCE=10V f=100MHz VCB=10V, f=1MHz IC=1A, IB=10mA, VCC=50V IC=1A, IB=±10mA, VCC=50V Emitter-Base Breakdown V(BR)EBO Voltage Collector Cut-Off Current...