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ZTX1151A Dataheets PDF



Part Number ZTX1151A
Manufacturers Zetex Semiconductors
Logo Zetex Semiconductors
Description PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR
Datasheet ZTX1151A DatasheetZTX1151A Datasheet (PDF)

PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ISSUE 1 - JANUARY 1997 FEATURES * VCEO= -40V * 3 Amp Continuous Current * 5 Amp Pulse Current * Low Saturation voltage * High Gain ZTX1151A C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Base Current Power Dissipation at T amb=25°C Operating and Storage Temperature Range SYMBOL V CBO V CEO V EBO I CM IC I.

  ZTX1151A   ZTX1151A



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PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ISSUE 1 - JANUARY 1997 FEATURES * VCEO= -40V * 3 Amp Continuous Current * 5 Amp Pulse Current * Low Saturation voltage * High Gain ZTX1151A C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Base Current Power Dissipation at T amb=25°C Operating and Storage Temperature Range SYMBOL V CBO V CEO V EBO I CM IC IB P tot T j:T stg VALUE -45 -40 -5 -5 -3 -500 1 -55 to +200 UNIT V V V A A mA W °C ZTX1151A ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). VALUE PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage SYMBOL MIN. V(BR)CBO V(BR)CES V(BR)CEO V(BR)CEV -45 -40 -40 -40 -5 TYP. -95 -90 -85 -90 -8.5 -0.3 -0.3 -0.3 -60 -115 -135 -160 -180 -950 -815 270 250 180 100 450 400 300 190 40 145 40 170 -100 -100 -100 -90 -170 -210 -230 -240 -1050 -950 MAX. UNIT V V V V V nA nA nA mV mV mV mV mV mV mV CONDITIONS. IC=-100µA IC=-100µA IC=-10mA IC=-100µA, VEB=+1V IE=-100µA VCB=-36V VEB=-4V VCE=-32V IC=-0.1A, IB=-1.0mA* IC=-0.5A, IB=-5mA* IC=-1A, IB=-20mA* IC=-1.8A, IB=-70mA* IC=-3A, IB=-250mA* IC=-3A, IB=-250mA* IC=-3A, VCE=-2V* IC=-10mA, VCE=-2V* IC=-0.5A, VCE=-2V* IC=-2A, VCE=-2V* IC=-3A, VCE=-2V* IC=-5A, VCE=-2V* Emitter-Base Breakdown V(BR)EBO Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector Emitter Cut-Off Current Collector-Emitter Saturation Voltage ICBO IEBO ICES VCE(sat) Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio VBE(sat) VBE(on) hFE 800 Transition Frequency Output Capacitance Switching Times fT Ccb ton MHz pF ns IC=-50mA, VCE=-10V f=50MHz VCB=-10V, f=1MHz IC=-2A, IB=-20mA, VCC=-30V ZTX1151A TYPICAL CHARACTERISTICS 1.0 +25° C 1.0 IC/IB=100 0.8 0.8 VCE(sat) - (V) VCE(sat) - (V) 0.6 0.4 0.2 0 1m IC/IB=10 IC/IB=50 IC/IB=100 IC/IB=200 0.6 0.4 0.2 0 -55°C +25°C +100°C 10m 100m 1 IC - Collector Current (A) 10 1m 10m 100m 1 10 VCE(sat) v IC IC - Collector Current (A) VCE(sat) v IC 750 VCE=2V 1.4 IC/IB=100 1.2 hFE - Typical Gain 500 VBE(sat) - (V) 1.0 0.8 0.6 0.4 0.2 0 -55°C +25°C +100°C 250 +100°C +25°C -55°C 0 1m 100m 10m 1 IC - Collector Current (A) 10 1m 10m 100m 1 10 hFE v IC IC - Collector Current (A) VBE(sat) v IC 1.2 VCE=2V 10 0.9 IC - Collector Current (A) VBE(on) - (V) 1 DC 1s 100ms 10ms 1ms 100us 0.6 100m 0.3 -55°C +25°C +100°C 0 1m 10m 100m 1 10 10m 100m 1 10 100 IC - Collector Current (A) VBE(on) v IC VCE - Collector Emitter Voltage (V) Safe Operating Area ZTX1151A Transiant Thermal Resistance ( C/W) 180 160 140 120 100 80 D=0.2 D=0.5 tp D=t1 tp t1 1.0 Max Power Dissipation - (Watts) D=1(D.C) 0.75 Am tt en bi em 0.50 ra pe tu 60 40 20 0 D=0.1 D=0.05 Single Pulse re 0.25 0.1ms 1ms 10ms 100ms .


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