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PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR
ISSUE 1 - JANUARY 1997 FEATURES * VCEO= -40V * 3 Amp Continuous Current * 5 Amp Pulse Current * Low Saturation voltage * High Gain
ZTX1151A
C B
E
E-Line TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Base Current Power Dissipation at T amb=25°C Operating and Storage Temperature Range SYMBOL V CBO V CEO V EBO I CM IC IB P tot T j:T stg VALUE -45 -40 -5 -5 -3 -500 1 -55 to +200 UNIT V V V A A mA W °C
ZTX1151A
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
VALUE
PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage
SYMBOL MIN. V(BR)CBO V(BR)CES V(BR)CEO V(BR)CEV -45 -40 -40 -40 -5 TYP. -95 -90 -85 -90 -8.5 -0.3 -0.3 -0.3 -60 -115 -135 -160 -180 -950 -815 270 250 180 100 450 400 300 190 40 145 40 170 -100 -100 -100 -90 -170 -210 -230 -240 -1050 -950 MAX.
UNIT V V V V V nA nA nA mV mV mV mV mV mV mV
CONDITIONS. IC=-100µA IC=-100µA IC=-10mA IC=-100µA, VEB=+1V IE=-100µA VCB=-36V VEB=-4V VCE=-32V IC=-0.1A, IB=-1.0mA* IC=-0.5A, IB=-5mA* IC=-1A, IB=-20mA* IC=-1.8A, IB=-70mA* IC=-3A, IB=-250mA* IC=-3A, IB=-250mA* IC=-3A, VCE=-2V* IC=-10mA, VCE=-2V* IC=-0.5A, VCE=-2V* IC=-2A, VCE=-2V* IC=-3A, VCE=-2V* IC=-5A, VCE=-2V*
Emitter-Base Breakdown V(BR)EBO Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector Emitter Cut-Off Current Collector-Emitter Saturation Voltage ICBO IEBO ICES VCE(sat)
Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio
VBE(sat) VBE(on) hFE
800
Transition Frequency Output Capacitance Switching Times
fT Ccb ton
MHz pF ns
IC=-50mA, VCE=-10V f=50MHz VCB=-10V, f=1MHz IC=-2A, IB=-20mA, VCC=-30V
ZTX1151A
TYPICAL CHARACTERISTICS
1.0
+25° C
1.0
IC/IB=100
0.8
0.8
VCE(sat) - (V)
VCE(sat) - (V)
0.6 0.4 0.2 0 1m
IC/IB=10 IC/IB=50 IC/IB=100 IC/IB=200
0.6 0.4 0.2 0
-55°C +25°C +100°C
10m 100m 1 IC - Collector Current (A)
10
1m
10m
100m
1
10
VCE(sat) v IC
IC - Collector Current (A) VCE(sat) v IC
750
VCE=2V
1.4
IC/IB=100
1.2
hFE - Typical Gain
500
VBE(sat) - (V)
1.0 0.8 0.6 0.4 0.2 0
-55°C +25°C +100°C
250
+100°C +25°C -55°C
0 1m 100m 10m 1 IC - Collector Current (A) 10
1m
10m
100m
1
10
hFE v IC
IC - Collector Current (A) VBE(sat) v IC
1.2
VCE=2V
10
0.9
IC - Collector Current (A)
VBE(on) - (V)
1
DC 1s 100ms 10ms 1ms 100us
0.6
100m
0.3
-55°C +25°C +100°C
0 1m 10m 100m 1 10
10m 100m
1
10
100
IC - Collector Current (A) VBE(on) v IC
VCE - Collector Emitter Voltage (V)
Safe Operating Area
ZTX1151A
Transiant Thermal Resistance ( C/W)
180 160 140 120 100 80
D=0.2 D=0.5 tp D=t1 tp t1
1.0
Max Power Dissipation - (Watts)
D=1(D.C)
0.75
Am tt en bi em
0.50
ra pe tu
60 40 20 0
D=0.1 D=0.05 Single Pulse
re
0.25
0.1ms
1ms
10ms
100ms
.