NPN SILICON PLANAR SMALL SIGNAL TRANSISTOR
ISSUE 2 MARCH 94
ZTX300
C B
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Colle...
NPN SILICON PLANAR SMALL SIGNAL
TRANSISTOR
ISSUE 2 MARCH 94
ZTX300
C B
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO IC Ptot Tj:Tstg 25 25 5
E-Line TO92 Compatible VALUE UNIT V V V mA mW °C
500 300 -55 to +175
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Sustaining Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage SYMBOL V(BR)CBO VCEO(sus) V(BR)EBO ICBO MIN. 25 25 5 0.2 0.2 0.35 0.65 50 150 6 7 1.0 300 MHz pF dB TYP. MAX. UNIT V V V
µA µA
CONDITIONS. IC=10µ A, IE=0 IC=5mA, IB=0 IE=10µ A, IC=0 VCB=25V, IE=0 VEB=4V, IC=0 IC=50mA, IB=5mA* IC=10mA, IB=1mA* IC=10mA, VCE=6V* IC=10mA, VCE=6V f=100MHz VCB=6V, IE=0 f=1MHz VCE=6V, f=1KHz RS=1500Ω , IC=100µ A
Emitter Cut-Off Current IEBO VCE(sat) VBE(sat)
V V
Static Forward Current hFE Transfer Ratio Transition Frequency Output Capacitance Noise Figure fT Cobo N
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% 3-156
ZTX300
TYPICAL CHARACTERISTICS
0.95 0.25 IC/IB=30 0.90 0.20 IC/IB=10 0.85 IC/IB=30
VBE(sat) - (Volts)
VCE(sat) - (Volts)
0.15
IC/IB=10
0.80
0.10
0.75
0.05
0.70 10
20
30
40
50
60
0
10
20
30
40
50
60
IC - Collector Current ...