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ZTX322 Dataheets PDF



Part Number ZTX322
Manufacturers Zetex Semiconductors
Logo Zetex Semiconductors
Description NPN SILICON PLANAR HIGH SPEED SWITCHING TRANSISTORS
Datasheet ZTX322 DatasheetZTX322 Datasheet (PDF)

NPN SILICON PLANAR HIGH SPEED SWITCHING TRANSISTORS ISSUE 3 – APRIL 94 FEATURES * 15 Volt VCEO * fT=600 MHz APPLICATIONS * VHF/UHF operation ZTX320 ZTX321 ZTX322 ZTX323 C B E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Base Current Continuous Collector Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO IB IC Ptot Tj:Tstg 30 15 3 100 500 300 E-Line TO92 Compatible VALUE UNIT V V V .

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NPN SILICON PLANAR HIGH SPEED SWITCHING TRANSISTORS ISSUE 3 – APRIL 94 FEATURES * 15 Volt VCEO * fT=600 MHz APPLICATIONS * VHF/UHF operation ZTX320 ZTX321 ZTX322 ZTX323 C B E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Base Current Continuous Collector Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO IB IC Ptot Tj:Tstg 30 15 3 100 500 300 E-Line TO92 Compatible VALUE UNIT V V V mA mA mW °C -55 to +175 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Sustaining Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter ZTX320, ZTX322 Saturation Voltage ZTX323 ZTX321 Base-Emitter ZTX320, ZTX322 Saturation Voltage ZTX323 ZTX321 Static Forward Current Transfer Ratio Output Capacitance Input Capacitance Transition Frequency at f=100MHz Noise Figure Power Gain ZTX320, ZTX321 ZTX322 ZTX323 SYMBOL V(BR)CBO VCEO(SUS) V(BR)EBO ICBO IEBO VCE(sat) VBE(sat) hFE Cobo Cibo fT N gpe 3-159 600 400 6 typical 15 20 20 100 MIN. 30 15 3 0.01 0.2 0.4 0.4 0.4 1.0 1.0 1.0 300 150 300 1.7 1.6 pF pF MHz MHz dB dB MAX. UNIT V V V µA µA CONDITIONS. IC=10µA, IE=0 IC=10mA, IB=0 IE=10µA, IC=0 VCB=15V, IE=0 VEB=2V, IC=0 IC=10mA, IB=1mA IC=10mA, IB=1mA IC=3mA, IB=0.3mA IC=10mA, IB=1mA IC=10mA, IB=1mA IC=3mA, IB=0.3mA IC=3mA, VCE=1V IC=3mA, VCE=1V IC=3mA, VCE=1V VCB=10V, f=1MHz VEB=0.5V, f=1MHz IC=4mA, VCE=10V IC=30mA, VCE=10V IE=1mA, VCE=6V RS=400Ω, f=60MHz IC=6mA, VCB=12V f=200MHz V V V V V V ZTX320 ZTX321 ZTX322 ZTX323 TYPICAL CHARACTERISTICS PD - Power Dissipation (Watts) 1000 0.4 800 0.3 fT - MHz 600 VCE=10V f=100MHz 0.2 400 200 0.1 0 0 5 10 15 20 25 0 -60 -20 0 20 60 100 140 180 IC (mA) T - Temperature (°C) fT v IC Derating Curve 3-160 .


ZTX321 ZTX322 ZTX323


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