ZTX449

NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 2 – MARCH 1994 FEATURES * 30 Volt VCEO * 1 Amp continuous current * Ptot= 1 Watt ZTX449 C B E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb = 25°C Operating and Storage Temperature Range PARAMETER SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO MIN. 50 30 5 0.1 10 0.1 0.5 1 1.25 1 70 100 80 40 150 15 3-173 300 MHz pF SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg TYP. MAX. 50 30 5 2 1 1 E-Line TO92 Compatible VALUE UNIT V V V A A W °C -55 to +200 UNIT V V V µA µA µA ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). CONDITIONS. Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-on Voltage IC=100µ A, IE=0 IC=10mA, IB=0 IE=100µ A, IC=0 VCB=40V VCB=40V, Tamb=100°C VEB=4V, IC=0 IC=1A, IB=100mA* IC=2A, IB=200mA* IC=1A, IB=100mA* IC=1A,VCE=2V* IC=50mA, VCE=2V* IC=500mA, VCE=2V* IC=1A, VCE=2V* IC=2A, VCE=2V* IC=50mA, VCE=10V f=100MHz VCB=10V, f=1MHz Emitter Cut-Off Current IEBO VCE(sat) VBE(sat) VBE(on) V V V V Static Forward Current hFE Transfer Ratio Transition Frequency Output Capacitance fT Cobo *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% ZTX449 TYPICAL CHARACTERISTICS 0.8 tf,tr,td ns 150 IB1=IB2=I...